Design Of 2.4GHz SOI CMOS Narrow Band Low Noise Amplifier

In recent years,Wireless Sensor Network(WSN)has been widely used in home,medical care,environment and industry because of its low cost,low power consumption,distributed and self-organizing.Wireless RF transceiver module is an important part of wireless sensor networks,and its research has become one of the hot spots.Low-noise amplifier(LNA),as the first-level active circuit of the receiving system,will have a direct impact on the performance of the entire RF transceiver system due to its performance such as noise and power consumption.The SOI CMOS technology has the advantages of small power consumption,fast operating speed and small parasitic capacitance,so it is of great significance to study the SOI CMOS low noise amplifier.In this thesis,a 0.28?m SOI CMOS process was used to design a 2.4GHz narrowband low noise amplifier for WSN.Based on the introduction of the performance parameters of narrow-band LNA and the advantages and disadvantages of several common LNA architectures,this thesis chooses the structure of differential-type cascode LNA and adopts the capacitive cross-coupling technique and the negative inductance of source inductance,Improve linearity,reduce noise,enhance isolation,and achieve impedance matching.This article gives the design process of narrowband LNA,including the main circuit structure,input and output matching,ESD protection and so on.The schematic simulation results,layout design and post-simulation results are given.The post-simulation results show that the input and output impedance matching are less than-25 dB,the noise figure is 2.74 dB and the voltage gain is 21.7dB.Input 1dB compression point is-21.82 dBm and the core current is 6mA at the frequency of 2.44 GHz,operating temperature of 27?,TT process corner and 1.5V supply voltage.The narrowband low noise amplifier designed in this thesis has good performance and can be used in WSN wireless communication system.