Design Of Silicon Epitaxial Growth Temperature And Gas Flow Control

With the rapid development of semiconductor industry and the continuous improvement of product quality,the barrel epitaxy equipment can not adapt to the development status of silicon epitaxy products because of its own structural characteristics.Especially,the 6-inch products can not meet the requirements of customers.Therefore,such equipment is facing the risk of being eliminated.In order to save these equipment which will be discarded,this paper studies and studies the process principle and equipment structure in depth.Through optimum design,the problems faced are finally solved,the value of equipment is fully utilized,and the potential of equipment is developed.The design of this paper is of great significance to promote the quality of epitaxy and the development of silicon epitaxy in China.In this thesis,silicon epitaxy products as the research object,the main research work includes two aspects:The problem of poor consistency of resistivity in large-scale production has been focused on and analyzed.Especially in the aspect of growth temperature,by studying the theoretical knowledge and the characteristics of ion implanted wafers,the method of temperature compensation has been chosen to suppress the uneven distribution of temperature,and different schemes have been designed to find the optimal results and optimize the growth temperature.The problem of poor consistency of thickness was analyzed.The principle of gas flow was studied.The influence of circumferential flow and longitudinal flow on the system was compared,and the difference was found.The gas flow was optimized through design.All the design in this paper is the premise of not solved in the existing process,starting from the direction of equipment defects,the original equipment itself,by changing the structure inherent in the use of different materials and innovative composition to achieve optimization.Finally the kind of design scheme,which is used for analysis and improvement of effectiveness in the device,the results of comparative experiments,determine the design effect,and through large-scale validation of products,and eventually realizethe optimal growth temperature and gas flow,make the products to meet customer needs.A maximum value of equipment had been played.The inter-chip error of resistivity uniformity of epitaxy layer is less than 5%,and the inter-chip error of thickness uniformity of epitaxy layer is less than 3%.