Research On Electromagnetic Susceptibility Of SOI Integrated Circuits In Aerospace Environment

As the feature size of integrated circuits(ICs)continues to decrease and the operating frequency continues to increase,the electromagnetic compatibility(EMC)of integrated circuits has received increasing attention.Electronic equipment in the aerospace environment not only needs to work in a small and confined space for a long time,but also is affected by space radiation.This makes space application ICs not only have to face EMC problems,but also need to consider radiation effects and aging damage.The voltage reference circuit is used to provide a reference voltage to the entire circuit and is the heart of ICs.In extreme environments,the output voltage of the voltage reference circuit is so susceptible that the stability of the entire circuit may be changed.Through theoretical analysis,simulation and experiment,this paper studies the synergy effect of EMC and aging of silicon-on-insulator(SOI)device,and the synergy effect of EMC and total ionizing dose(TID)irradiation of SOI voltage reference circuit.First,the research objects and the experimental contents are described in detail.The study included three voltage reference circuits.The impact of TID irradiation on the electrical characteristics and electromagnetic susceptibility(EMS)of the circuit were verified by high and low temperature electrical characteristic tests,EMS tests,and TID irradiation tests.Second,aging characteristics of SOI devices and the failure mechanism in the presence of electromagnetic interference are studied.Through the theoretical calculation,the mechanism of DC shift generated by the device under electromagnetic interference is analyzed.Combined with the aging mechanism of the device,the mechanism of aging on the electrical properties and EMS of the device was analyzed,and verified by accelerated aging test and EMS test.The conclusion is that the DC shift appeared on the drain source current in the presence of electromagnetic interference is the result of the nonlinearity of the device,and the aging effects can reduce the nonlinearity of the device,thereby reducing the EMS of the device.Then,the failure mechanism of the circuit in the presence of electromagnetic interference is studied.The test results of EMS show that the failure mode of the voltage reference circuit in the presence of electromagnetic interference is the negative DC shift of the output reference voltage.By analyzing the failure mechanism of the circuit when electromagnetic interference is injected from different pins,it can be concluded that the DC shift generated in the presence of electromagnetic interference is the result of the nonlinearity of the circuit,and the failure mode is verified by simulation.Combined with the architectures of the two comparison circuits and the EMS test results,the conclusion is that the stronger the nonlinearity of the circuit,the stronger the EMS of the circuit.Finally,the mechanism of TID irradiation on the electrical characteristics and the EMS of the circuit is studied.Combined with the damage mechanism of the TID irradiation on the device,the impact of the device parameter shift on the electrical characteristics of the circuit was analyzed by theoretical calculation and verified by simulation.The impact of device parameter shift on the nonlinearity of the circuit is analyzed.Combined with the EMS simulation results,it is concluded that the device parameter shift affects the EMS of the circuit by changing the nonlinearity of the circuit.By comparing the EMS of the voltage reference circuit at medium and low frequencies before and after irradiation and after annealing,the parameters that causing the EMS to increase are found.By comparing the EMS threshold at high frequencies and the power values recorded in the directional coupler,it is concluded that the TID irradiation can affect the parasitic capacitance parameter in the circuit,thereby changing the EMS at high frequencies after irradiation.