Theoretical Analysis And Experimental Study On Characteristics Of Cu₂O Semiconductor Thin Film Transistor

Semiconductor thin film transistor,with the advantages of easy preparation,low energy consumption and good stability,is the basic unit of integrated circuit manufacturing devices.Because of the influence of semiconductor doping characteristics and preparation process,around the world for the preparation of n-type semiconductor materials and thin film field effect transistor device research is more at present,for the p type oxide semiconductor film materials of the field effect transistor device preparation and theoretical analysis research are relatively lagging behind.In recent years,p-type oxide semiconductor thin film transistor devices have shown good application potential in solar cells,photovoltaic devices,transparent electronic devices,flexible electronic devices and other fields.Therefore,the preparation,characteristics and application of p type oxide semiconductor thin film transistor devices are studied.The main contents of this article are as follows:?1?Using the calculation of first-principles density functional theory,the energy band structure and density of states of Cu₂O crystal materials after structural optimization are systematically studied.The untrapped Cu₂O has a minimum band gap of about 0.51eV and is a direct bandgap semiconductor.The electronic energy level at the top of the valence band is mainly contributed by Cu-3d and O-2p,and the electronic energy level at the bottom of the conduction band is mainly contributed by Cu-4p and O-2p.It is found that the forbidden band width of Cu₂O crystal is relatively small,the Fermi energy surface is closer to the valence band,and the energy band structure has the energy band characteristics of a typical P-type semiconductor material.?2?Magnetron sputtering was used to prepare Cu₂O semiconductor thin films with pure Si?100?wafer as substrate and copper target as target material.Through SEM analysis and characterization,it was found that the surface of the unannealed Cu₂O film was smooth,the size of crystal particles was uniform,and the grain size was about 5-15nm.With the increase of annealing temperature of the film sample,the surface roughness of the film increases gradually,the crystal particles appear agglomeration,and the surface gradually appears wrinkles and cracks.XRD analysis showed that the Cu₂O thin films were monocrystal thin films with proper oxygen flux.XPS analysis proved that the price of Cu in the prepared Cu oxide film was+1,which was indeed Cu₂O.?3?The bottom gate Cu₂O semiconductor thin film field effect tube was prepared by magnetron sputtering with thermal oxidation Si?100?wafer as substrate and different preparation parameters.In the experiment,by changing the deposition power,contrast different channel width preparation field effect transistor,semiconductor properties tester to test the different with grid voltage,different laser light power,the influence of annealing temperature on the IV characteristics,experimental results show that the data of Cu₂O-TFT devices with the absolute value of output current and the grid voltage increases,and the IV characteristic curve test found that the device has the typical characteristic of p channel enhanced field effect transistor.The results of this paper have certain theoretical and experimental reference values for the preparation of 2D bottom gate type transistor and other devices using p-type Cu₂O semiconductor thin films in the future.