Design Of 140GHz Broadband Receiver Circuit Based On CMOS Technology

Driven by the demand of high-speed communication,wireless communication technology shows a trend of development towards millimeter wave.The ultra-wide D-band(110-170GHz)that has not been allocated and occupied is of great attraction to the contemporary international high-speed wireless communication.In addition,in order to satisfy people for high performance and low power consumption,low cost and portable communication plan requirements,how to use CMOS technology with low cost and high integration to achieve high performance millimeter waves(MMW)products,has become one of hot topics in the study of integrated circuit systems.Therefore,the design of low-power as well as high-performance CMOS receiver has the vital significance in the development of wireless communication technology.At first,this thesis briefly introduces the research background and significance of the subject,analyzes the research progress of W-band(75?110GHz)and D-band CMOS receivers at the domestic and foreign,and summarizes the advantages and disadvantages of several common circuit structure and the corresponding technical in the design of Low-noise amplifiers(LNA)and mixers.Based on the above work,a 140GHz broadband receiver chip on 65nm CMOS process is designed.Here,it mainly studied and discussed the LNA and Mixer,which is the two key modules of the receiver front-end circuits.The main works are as follows:(1)Analyzes and summarizes the characteristics of common active transistors and passive components(microstrip inductance,on-chip balun and transformer)in millimeter wave frequency,and summarizes the design rules for various passive components.(2)A 120?150GHz five stages full differential low noise amplifier is designed by means of transformer coupling.The methods of minimum noise matching,maximum gain matching and circuit stability improving are analyzed in the process of circuit design.This circuit improves the gain and stability in millimeter band by MOS capacitance neutralization technology,and it adopts distributed central frequency impedance matching method to expand the bandwidth and adjust the circuit to be unconditionally stable in the whole working frequency band.The results show that the gain of LNA is greater than 20dB,the noise is less than 7dB from 120GHz to 150GHz,and the power consumption is 79mW under the 1.2V power supply voltage.(3)A D-band down-conversion mixer base on traditional Gilbert cell is designed.Using the weak inversion biasing technique,the mixer achieves high gain performance under the low LO driven power and reduces power consumption.In the circuit design,a compensated Marchand balun with high balance and wideband characteristics is used to meet the bandwidth requirement.The simulation results show that,the mixer achieves a flat conversion gain of 3?4dB at LO power of OdBm from 110-170GHz,the port isolations are all greater than 30dB,and the drain bias current is only 3.4mA.(4)After completing the above two circuit designs,a whole receiver chip integrated by LNA and Mixer and a discrete receiver chip directly connected by a short microstrip are designed respectively.The simulation gain in the frequency of 120?150GHz is 22-24dB and 20.3-24dB,respectively.The noise figure is less than 1 OdB,and the total dc power consumption is 83mW.A 140GHz receiver front-end chip is designed in this thesis,the low noise amplifier and mixer circuit are designed in 65nm CMOS process,and they are co-simulated by ADS and Cadence software.Compared with the similar circuits which were reported in recent years at home and abroad,the proposed receiver circuit has relative advantages in terms of bandwidth,gain and noise performance.To some extent,it provides a reliable method for the design of high-performance CMOS circuit above 100GHz.In the near future,the CMOS receiver is expected to be successfully used in D-band communication systems.