Research Of InP HEMT Device Modeling And PDK Technology

InP high electron mobility transistors(HEMTs)have the characteristics of high electron mobility,low noise,low power consumption and high gain.InP HEMTs are widely used in solid state power millimeter and microwave circuits.Reducing the gate length (L_g) of InP HEMTs increases the DC and microwave performance,allowing the devices to operate at higher frequencies.The compact model can be used to integrate the device into the circuit design and simulation of the circuit environment.So the research of the InP HEMT model has far-reaching significance.Process Design Kit(PDK)combines design process with EDA tools and research of PDK technology helps to improve IC design efficiency.In this thesis,InP HEMT device modeling and PDK technology are studied.The improved large-signal equivalent circuit model considers the short-channel effect that appears in short-gate length InP HEMTs.The IV curve is fitted using a segmented channel current modeling method,the channel current equation and the gate charge equation are both continuous and high order drivable.The gate charge model satisfies charge conservation.The improved small signal equivalent circuit model parameters extraction is concise,the model accuracy is high.The results show that the model proposed in this thesis is better than the traditional model and has good practicability.A 70 nm InP HEMT process PDK is developed,which realizes the function of circuit simulation and layout design,and can accurately support IC circuit design.The main contents are as follows:(1)The development of InP HEMTs and models is described.The working principle and performance parameters of InP HEMTs are studied.And the thesis studies the structure,process and performance of the devices.(2)The equation structure and parameter significance of large signal model of HEMTs are studied.The large signal of InP HEMT device is modeled by Angelov model and studied.An improved large signal equivalent circuit model of InP HEMT device is established.(3)The basic theory of traditional small signal model and the method of parameter extraction are studied.Considering the laboratory conditions and the characteristics of sample devices,a small signal equivalent circuit model suitable for InP HEMTs is proposed.(4)The basic theory of PDK is elaborated.The basic theory and development flow of PDK based on Keysight ADS software are studied.The PDK is developed using AEL language.