Research On Multi Physical Modeling Of InGaP/GaAs HBT Devices

With the development of wireless communication and radio frequency technology,the requirements of device design for integrated circuit design have gradually increased,especially in the design of high frequency circuits such as microwave radio frequency.III-V compound semiconductor devices have been researched for their high frequency characteristics,and In Ga P/Ga As heterojunction bipolar transistors(HBTs)have a higher bandgap than other compound semiconductors.The advantages of larger current gain,higher reliability,and better temperature stability are very suitable for microwave millimeter-wave circuit design.Therefore,this thesis enters in-depth research into its model and establishes a more accurate and reliable method that can be practically applied model.This thesis starts with the principle and characteristics of In Ga P/Ga As HBT.Based on the analysis of its structure and its foundation,the small signal model is established.According to the equivalent circuit of the small signal model,the parameters of the small signal model are extracted using the method of directly extracting parameters.Afterwards,several important large-signal models of HBT are analyzed and their model descriptions are introduced.The advantages and disadvantages of each model in low-frequency and high-frequency are analyzed and compared.Based on this,the Agilent HBT large-signal model is highlighted and its parameters are highlighted.Analysis and classification.This thesis adopts more accurate test instruments for small signal and large signal test,and then introduces the device's process parameters into the Agilent HBT model,modifies and adjusts the parameters,and uses the method of comparing the test and model simulation results to continuously modify the model parameters.An accurate model with good adaptability to size and temperature is obtained to improve the sensitivity of the device model to the process flow and working environment temperature,thereby improving the device design yield.Finally,using the above HBT to design a powercell,the powercell can simulate the working state of the device in practical application,test the power cell and fit the model,and then perform electromagnetic field simulation(EM simulation)and heat on the powercell.Simulations are conducted to study the electromagnetic and thermal characteristics,increase the thermocouple and electromagnetic coupling compensation,further improve the model,and obtain a practically applicable In Ga P/Ga As HBT model.In this thesis,by modifying the parameters of Agilent HBT model,a In Ga P/Ga As HBT model with good adaptability to five different sizes is obtained.The model can be extended to other sizes.The obtained model has good adaptability to three temperatures at-25,25 and 125 ?.Therefore,the model is for anything between-25 and 125 centigrade.The temperature is applicable.Finally,in this thesis,a relatively accurate device model is obtained under DC and high frequency conditions,and a more accurate result of powercell verification is obtained.The simulation results of the model parameters and the error of the test results of the actual devices are within 5%.