Electro-thermal Damage Effect Of HPM On GaAs MESFET And HEMT Devices

As a typical source of electromagnetic environment,high-power microwave(HPM)has attracted more and more attention in the military and electronic information fields because of its higher power and frequency.With the increasing integration of semiconductor integrated circuits,the power consumption and feature size of semiconductor devices are also shrinking,and the sensitivity threshold is also decreasing.In a complex electromagnetic environment and a more fragile high-density integrated circuit environment,HPM easily penetrates into the system through antennas,cables and large sunroofs,that is to say,the “front door” coupling transforms its energy into large voltage and large current which vary with time and space.The voltage and current then act on the ports of the low noise amplifier devices,causing the functional disturbances or functional failures,even direct physical damage to the electronic system.As the most common microwave low noise amplifier components,gallium arsenide metal semiconductor field effect transistors(Ga As MESFETs)and gallium arsenide high electron mobility transistor(Ga As HEMT)devices are widely used in communication systems due to their high frequency and low noise characteristics.Therefore,systematic research on the HPM effect of Ga As MESFETs and Ga As HEMTs is necessary for the reliability protection of electronic systems.Starting from the most common and irreversible thermal damage of HPM effect,this paper typically studies Ga As MESFETs and Ga As HEMT devices,focusing on the electrothermal damage of HPM.The main research content and research results are as follows:1.By utilizing the semiconductor module and solid heat transfer module of the finite element software COMSOL,the coupling of Ga As MESFET and Ga As HEMT devices under multiphysics was realized,and a two-dimensional electro-thermal coupling model of Ga As MESFET and Ga As HEMT devices was constructed.On this basis,the correctness of the device model is verified by its basic characteristics and the model parameters of the device material at high temperature were revised based on the experimental data.The thermal damage of the device under the action of HPM was simulated by numerical simulation.It was pointed out that whether for the MESFET device or the HEMT device,the thermal damage points all appear at the lower edge of the gate near the source side.2.Through the extraction of the internal parameters of the device,form the threedimensional view,which visually display the voltage,current and heat source distribution within the device.The thermal source points of the MESFET device respectively appear on both sides of the gate,the lower edge close to the gate side of the drain and source.Because the heat source of the HEMT device is significantly higher than the other regions at the lower edge of the gate near the source when burned,so the maximum value of the heat source occurs at the gate's lower edge close to the source side.3.Via the adjustment of the structure parameters of the device to study its thermal damage under high-power microwaves,provide the influence of the gate length and the device doping concentration on the device damage.Based on the criterion of device burn-up time,by changing only one device parameter through the control variable method,we obtained the change rule of the thermal damage caused by the change of gate length and the device doping concentration under the same injection power.It has been found that increasing the gate length and decreasing the doping have a better effect on the anti-HPM effect of the device under the condition that the overall performance of the device is not greatly affected.4.By comparing the experimental results of HPM injection of Ga As HEMT LNA with the simulation results,the correctness of the simulation results was verified.The relationship between the thermal resistance and the thermal resistance and structural parameters of the HEMT device was analyzed through mathematical analysis.The analysis results showed that the longer gate length,larger gate width,longer drain and source lengths,and thinner substrate help Anti-HPM Optimization for Ga As HEMT Devices,and verified part of the analysis results in the form of simulation.This thesis uses the multi-physics software COMSOL based on the finite element to detail the thermal parameters of the semiconductor device.The mathematical analysis of the simulation and thermal resistance of changing the device parameters has certain reference value against the HPM reinforcement protection design.