| Two-dimensional materials Molybdenum sulfide?MoS2?as a typical representative of transition metal sulfides?TMDCs?,compared with graphen,has a sizeable bandgap,ranging from the indirect bandgap of 1.2eV for bulk MoS2 to the direct bandgap of 1.8eV for monolayer MoS2.Due to its unique structure,so that it in the transistor,photoelectric detection,logic devices and many other aspects of the potential application.As one of the popular the materials to replace silicon in the future,MoS2has been attracting more and more people attention.In this paper,MoS2 thin films were prepared by mechanical stripping method.Their characterization tests were carried out by optical microscopy,Raman,AFM?atomic force microscopy?and PL?photoluminescence?characterization,indicating that MoS2 film were stripped.On this basis,we fabricated the MoS2-FET and tested it.The test results achieved good electrical performances.The current switch ratio(Ion/Ioff)was more than 106,and the carrier mobility rate???is close to 25 cm2V-1s-1.At the same time,we also conducted electrical test of MoS2-FET at low temperature.The effects of temperature on mobility and threshold voltage at different temperatures?6K300K?show that our transistors are mainly affected by impurity scattering and their mobility with the increase of temperature.Subsequently,we also prepared some SWCNT-FETs,which also has a current switching ratio of 105.On the basis of this,the complementary inverters of MoS2/SWCNT are fabricated to realize the matching between the input and output signals(Vin-Vout),and have good basic performances including peak voltage gain?Av?exceeding 15,static power consumption?P?as low as several nanwa and high noise margins of 0.45VDD,which are suitable for future logic circuits application.Finally,the effect of channel length to width ratio?W/L?on the performances of the device is studied.The results show that the suitable width and breadth ratio can achieve the tradeoff between voltage gain and static power consumption. |
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