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Design And Thermal Characteristic Simulation Of Package Structure Of Dual-GCT

Posted on:2019-12-02Degree:MasterType:Thesis
Country:ChinaCandidate:T C XieFull Text:PDF
GTID:2428330566967634Subject:Integrated circuit engineering
Abstract/Summary:PDF Full Text Request
With the rapid updating and optimization technology of semiconductor process,power electronic devices have a trend of decreasing size and increasing switching frequency and power level,which will cause higher power density and junction temperature of devices.In order to improve the heat dissipation capability and reliability,the research and analysis of the thermal characteristics of the package structure will become very important for power semiconductor devices.In this paper,the conventional and integrated packaging structure of Dual-Gate Commutated Thyristor(Dual-GCT)is designed,and use the finite element analysis software ANSYS to analyze and compare the temperature and thermal-mechanical stress distribution of the two structures.the thermal characteristics of the package structure in environmental fluctuations are simulated through temperature cycling and temperature shocks.The main research contents are as follows:Firstly,based on the characteristics of the metallization structure on the back side of the device,a multi-layer metallization structure model was established by using ANSYS software,and to analyze the thermal mechanical stress results of Al-Cr-Ni-Ag and Al-Ti-Ni-Ag structures under temperature load.the optimum thickness of the Al-Ti-Ni-Ag structure has reached the minimum thermal mechanical stress by the result,which takes the highest thermal stability.Secondly,according to the features of pressure pack GCT and Dual-GCT structure,design the package structure of Dual-GCT,and explore the temperature and thermal mechanical stress distribution of the package structure under thermal steady state.then to compare the thermal deformation results under the high and low temperature cycle and the temperature shock conditions.Thirdly,based on the structural characteristics of Dual ICT,to design the Dual-ICT package structure,and explore the temperature distribution and thermal mechanical stress distribution,then to solve the thermal deformation of the package under the temperature shock simulation.the package structure and heat dissipation mode are optimized.The results provide some thermodynamic reference for the design of the Dual-GCT package.
Keywords/Search Tags:Dual-Gate Commutated Thyristor(Dual-GCT), integrated package, temperature distribution, thermo-mechanical stress distribution, temperature cycle
PDF Full Text Request
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