Design And Research Of Performance Test Platform For EBCMOS Low-light-level Imaging Device

Low-light-level imaging digitization has become the one of the main development directions of the low-light-level night vision technology.And the electron bombarding device EBCMOS(Electron Bombardment Complementary Metal Oxide Semiconductor)can also complete the clear image of the target object under the condition of the faint starlight or lower illumination.At the same time,the low noise and high temporal and spatial resolution brought by nanosecond gate control are not replaceable by solid imaging devices.EBCMOS is a new digital low-light-level imaging device.It has many advantages such as small size,light weight,high sensitivity and low illumination.Therefore,the research of EBCMOS is the main development trend of low-light-level imaging devices in the future.At present,the research of EBCMOS low-light-level imaging device on the domestic is still in the theoretical stage.There is no corresponding research report on the domestic for performance test platform.In order to expand the research on EBCMOS low-light-level imaging devices,this paper builds its performance test platform based on the working principle of EBCMOS imaging device.Design performance to extract the logic timing of the circuit.The performance of vacuum electron bombardment was tested and verified.To realize the digital description of device performance.In order to complete the above research work,this paper studies the essential technologies such as electron multiplier mechanism,performance extraction circuit and logic timing design,vacuum electron bombardment experiment and other essential technologies.It is divided into the following three parts:The first part: from the semiconductor electron multiplier mechanism,the incident photoelectron energy loss,in the passivation layer of EBCMOS low-light-level imaging device,was mathematically formulated with the low-energy-electron solid interaction model,numerically simulated in Monte-Carlo method and experimentally evaluated in vacuum with the lab-built test platform.The impact of the oxide thickness on the energy loss was investigated;the incident photoelectron trajectory,secondary electron distributions in multiplication layer and dependence of charge collection efficiency(CCE)on the structure of exponential-doping epitaxial layer were simulated.The simulated results show that the oxide thicknesses significantly affects the energy loss,and that the device with the optimized structure has a CCE of 92%.Meanwhile the research on back thinning process for EBCMOS electron multiplier layer provides the solid theoretical and technical foundation for the research of the EBCMOS low-light-level imaging device performance test platform.The second part: research on the performance extraction circuit of EBCMOS low-light-level imaging device.The design and construction of the circuit is extracted by the FPGA as the performance of the controller hardware system which includes image sensor module,a signal receiving and processing module,data storage module and VGA display module four parts.On this basis,the unique logic timing sequence for EBCMOS imaging device is designed.The transformation process of analog image to digital image is completed and the realization method of EBCMOS imaging device performance digitized description is explored.The third part: build the performance test platform of EBCMOS imaging device.Conduct vacuum electron bombardment experiment.Complete the verification experiment of the device performance extraction circuit and test of related performance parameters.The experimental results are analyzed and summarized.Optimize and correct the logic sequence design of the extraction circuit.The digital description of performance of EBCMOS low-light-level imaging device and obtain the desired image information.Then it provides theoretical and technical support for the performance characterization of EBCMOS low-light-level imaging devices.The results of this study hope to provide some reference and help for the study of the performance test of EBCMOS low-light-level imaging device.