Study On Mechanism Of Vertically-charge-transferring Pixel Sensor And Its Detection Probability Of Low-light-level Imaging

With the development of human technology, image sensor has become increasingly important in modern life. But now the already existed image sensor-the first generation imaging sensor CCD and the second generation imaging sensor CMOS-APS are not particularly outstanding in the resolution, imaging speed and low light level detection. Although some sensor of special structure can meet some of the conditions, but they can not achieve these objectives at the same time. For example, the CCD-based low-light imaging EMCCD can not image at high speed. However, the high-speed low-light-level detector SPAD(single photon avalanche detector) can not integrate in large scale because of its complicated peripheral circuit. So there is significant meaning to study high-speed low-light-level detector with simply peripheral circuit.This article is focus on studying the working mechanism of variety working methods of the flash-based new Vertically-charge-transferring Pixel Sensor. I have analysis the characteristic of each working method and the detection probability of low-light-level imaging of VPS. At the same time, I have carried out a series of tests with the chip of VPS with0.13μm NOR flash technology. The main achievement is as follows,1. Analysis the FN tunneling mechanism of the source-drain-floating working model of VPS and the substrate hot electron injection mechanism of the source-drain- common working model of VPS. And demonstrated the correctness of the theory mentioned above. At the same time, analysis the characteristic and relative merits of each working method and relevant improvement plan for them.2. Demonstrate the detection probability of low-light-level imaging of VPS. Demonstrate the correctness of the theory with a series of relevant experiments. Simultaneously, propose the issues of low-light-level imaging with the FN tunneling working model of VPS and possible solutions.3. Propose using the avalanche injection method to magnify the optical signal for the low-light-level imaging. Simultaneously, demonstrate the existence of the avalanche amplification phenomenon and the problem in it with the experiment.4. Design the high speed detection circuit for VPS and carry out a series of preliminary tests. At the same time, propose two new VPS-based cell structures for reducing the dark current in the low-light-level imaging, give a detailed account of the working method for the two new cells and carry out relevant emulation.