Construction And Performances Of Photodetectors Based On Tin Disulfide And Its Composites Photodetector

When the graphene was discovered in 2004,it has drawn extensive attention due to its excellent properties.And now the study about graphene has been extened to the materials,which have the similar structure with garphene.Among many kinds of graphene-like materials,transition metal sulfides cause great concern due to their has high electron mobility and a wide response spectrum.The tin disulfide(SnS2)introduced in this article is one of them.In this work,we studied the photoelectric properties of the SnS2.In addition,the SnS2/graphene composites were prepared,and the influence of graphene to the SnS2/graphene composites was analyzed.This article is mainly divided into the five chapters:The first chapter is an introduction to the background of this work.The working principle of the semiconductor photodetector(SnS2 is a semiconductor),research background and research content were introduced in this part.In second chapter,we using a simple hydrothermal method to preparation the tin disulfide nanosheets and illustrates its synthesis mechanism.A tin disulfide photodetector was prepared by coating the SnS2 on the Si/SiO2 substrate and a photoresponse test was performed.In this experiment,pure SnS2 photodetectors exhibited good periodicity and stability.Although the pure SnS2 exhibits good photoelectric properties,the higher photogenerated electron hole pair's recombination rate of tin disulfide seriously restricts its application in actual production.In order to reduce the recombination rate of the tin disulfide,we put the graphene into the tin disulfide to reduce the photoelectron holes in the SnS2 by the high conductivity of the graphene.The third chapter is based on the second chapter and from a SnS2/graphene.In the experimental part in this chapter,graphene was added during the preparation of tin disulfide to prepare a tin disulfide/graphene composite.In the composite material,the SnS2 nanosheets are uniformly embedded in the graphene skeleton to form a SnS2/graphene composite structure.And we analyzed the influence of graphene to tin disulfide photoelectric properties.The fourth chapter introduces the structure and photodetection performance of the solid-state thin-film photodetector about tin disulfide/graphene heterojunction.In this chapter,we put the SnS2/graphene on the indium-selenium oxide(ITO)glass by dip-coating and coated a solid electrolyte on its surface,and then placed another piece of ITO on the solid electrolyte and squeezed it.After the solid electrolyte solidifies,a solid-state thin film photodetector is prepared.Finally,we performed the photoelectric property of this solid-state photodetector.The fifth chapter is the summary of the full text and the outlook for the future.