Design Of Millimeter-Wave Band Pass Filter And Wideband Switch

Nowadays,the wireless communication system continuously extends toward the millimeter-wave frequency band since people are pursuing miniaturization,low power consumption and low cost of high-rate communication and communication systems.At the same time,with the continuous improvement and maturity of the integrated process,it is highly thought of and frequently used in in the field of radio frequency for its advantages of low cost,low power consumption,high integration and small size.Filters and switches act as frequency selection in the millimeter wave system and it's an important module of the front-end to the receiver.This thsis,therefore,has studied the band-pass filter(BPF)and single-pole single-throw switch(SPST)in millimeter-wave band based on integrated circuit technology.What's more,a band-pass filter circuit with single section ladder impedance resonant structure under the GaAs process and a broadband switching circuit based on a ?-type topology are designed.First of all,the micro-strip transmission line and ground plane theory are analyzed and a simplified micro-strip line model is established to extract relevant parameters through simulation software.Meanwhile,the thsis introduces the impact of ground plane on the circuit design in the RF field,which is validated by modeling and electromagnetic simulation.As to filter design,the thsis elaborates the principle of zero generation on the basis of analyzing the traditional filter theory,and emphatically analyzes the characteristics of the step-type transmission line and the open-circuit branch of short-circuit,which serves as a foundation for designing the band-pass filter.Based on GaAs process,two band-pass filters are designed with a single-section ladder impedance resonant structure.One filter,with the center frequency of 140 GHz,produces transmission zero through the method of constructing resonators.It starts from zero principle and its transfer zero point located at 122 GHz and 177 GHz respectively.The ADS results of simulation shows that the filter passband range is 122-177 GHz,the insertion loss is 2d B and return loss is 17 d B at 140 GHz.Later on,the second filter is smoothly finished.Its operating frequency is 50-80 GHz,following the previous filter topology.And it effectively takes advantage of the open circuit,that is to say it can determine the exact location of the transmission zero as wanted,which will be located at 36 GHz and 98 GHz ultimately.The EMF simulation results tell that the insertion loss is 1d B and the return loss is 20 d B at 65 GHz.Finally,this thsis completes the design of two kinds of broadband switch circuits based on 65 nm CMOS.After comparing the simplified circuit model parameters with the PDK model,MOS tube is adopted in the switch circuit design.The working frequency of the first switch is DC-110 GHz.It uses ?-type topology and has three MOS tubes in parallel with the gate width ratio of 1:2:4.This circuit has already been tested,and the results show that the insertion loss is 0.13-1.3d B,isolation is 14.2-18 d B at 0.5-67 GHz,the insertion loss is 1.5-2.48 d B,isolation is 19-22 d B at 70-110 GHz,the chip area is 340×280?m2,while the core area is 26×109?m2,and it eventually achieve an effect of continuous variable attenuation.Another frequency range of switch is 50-110 GHz,using a single MOSFET structure in parallel.The simulation results of three-dimensional electromagnetic field show that the insertion loss is 0.05-1.1d B,the isolation>25d B,and the return loss in the working frequency band always>10d B,and the core area is 64×105?m2.The thsis has studied the characteristics of the millimeter wave MOS device,followed by the simplified analysis and verification.At the same time,the circuit design method is studied and analyzed,and finally two band-pass filters and two wideband switches are successfully designed.