Ka-band High-power Switching Chip Research

The Ka band high power switch discussed in this thesis is realized by MMIC method, which is most important part of communication and radar T/R module. In this paper, the recent scientific advances of microwave switches implemented by monolithic microwave integrated circuit (MMIC) technique all over the world are systemically reviewed after introducing the operating principle of FET-based microwave switches and their MMIC implementation approaches, the state-of-the-art performances of MMIC switch bandwidth, inserting loss, isolation, switching time and power handling capability are presented. MMIC switch design methodologies and key techniques of MMIC switches are summarized, the prospects of MMIC switch technology is anticipated, some suggestion to developed future MMIC switch is presented in the paper.Based on 0.13um GaAs pHEMT MMIC process, design a chip of Ka band MMIC switch by Advanced Design System (ADS) simulation software is the main task of this thesis. The MMIC switch uses quarter wavelength microwave lines for wide band, inductor for resonate to improve insertion loss. Its configuration is symmetry to improve isolation. The capability of power is improved by stack of HEMTs.The designed MMIC switch will be used in 28-38 GHz, the insertion loss of this MMIC switch is less than 2 dB, the isolation is more than 25 dB, the capability of power higher than 1 w, the switching time less than 10ns, and the return loss more than 10 dB. The designed MMIC switch meets then anticipates targets and it will help to the development of millimeter wave MMIC switch in our country.