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A Single-Pole Nine-Throw RF Switch Design With GaAs PHEMT Technology

Posted on:2011-06-28Degree:MasterType:Thesis
Country:ChinaCandidate:W T GuoFull Text:PDF
GTID:2178360302483157Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The design of a single-pole nine-throw (SP9T) multi-band RF switch with 0.5μm GaAs PHEMT technology has been described in this paper. It is designed for customer premises equipment (CPE) of the 2nd and 3rd generation mobile communication system, which covers both GSM and TD-SCDMA frequency bands in transceiver systems, including two transmission paths and four reception paths for GSM and three transmission-reception paths for TD-SCDMA or UMTS systems. A DC boost has been utilized to improve the linearity. The power capacity is 35dBm; the insertion loss (include loss of PCB) of each path is less than 1.2dB; the isolation is more than 40dB; the harmonic suppression ratio is more than 66dBc.
Keywords/Search Tags:Single-Pole
PDF Full Text Request
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