Development Of Radio Frequency Plasma Source

At present,nitride and oxide have become the leading edge and hot spot in the research and application of semiconductor materials in the world.Plasma assisted molecular beam epitaxy is one of the important technology for the growth and study of nitride and oxide materials,and the radio frequency(RF)plasma source is the key equipment in the plasma assisted molecular beam epitaxy system.Now,most of the RF plasma sources used in materials science research in our country are purchased from abroad.In order to compensate for the deficiencies of this field,A RF plasma source is developed in this paper,it is of great significance to the research and development of new materials in our country.Firstly,based on the analysis of the working principle of the RF plasma source,a overall design scheme of RF plasma source was determined,which comprises the plasma generation and emission device,reaction source gas introduction device,cooling water circulation device,supporting device,shielding device,observation device and chamber connecting device.Secondly,according to the design requirements,the plasma discharge model was established,the generation and parameter distribution of pure argon plasma are simulated,using the inductively coupled plasma module in the finite element analysis software,the key parameters of the inductance coil and the vacuum discharge chamber are finally determined by the repeated simulation and modification of the discharge model,which provides a theoretical basis for the structure design of the plasma generation and emission device.Thirdly,according to the overall design of the model and key parameters of the discharge,various devices of RF plasma source are designed using mechanical design software,drawn parts and assembly drawings of RF plasma source,after finishing the parts,the assembly of RF plasma source is completed in strict accordance with the assembly of the vacuum components.Finally,we test the practical effects of RF plasma source by setting up a vacuum system.The RF plasma source developed in this paper can work stably,and it can be used in various kinds of nitride and oxide molecular beam epitaxy and other plasma treatment technology.The successful development of the RF plasma source has accumulated experience for the independent production of the small RF plasma source,it is helpful for further research and development of advanced RF plasma source in our country.