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Design Of Bi-directional Amplifier For Radar T/R Module

Posted on:2019-03-28Degree:MasterType:Thesis
Country:ChinaCandidate:R Q XieFull Text:PDF
GTID:2428330545965644Subject:Integrated circuit engineering
Abstract/Summary:PDF Full Text Request
Since the 1980s,solid-state active phased array system has been widely used in navigation,communication and other fields.At present,the mainstream technology of radar is using active phased array radar technology.The T/R component is the core of the active phased array radar technology.It contains a bi-directional amplifier.And the bi-directional amplifier is composed by a power amplifier of the uplink circuit and a low noise amplifier of the downlink circuit.As one of the key devices,the improvement of its performance will be very important for improving the stability of the whole system and saving the cost of the system.Because the switches in the traditional bi-directional amplifier produced the insertion loss of about 2dB,the switches in this paper is cancelled to improve the overall performance of the system.In order to achieve the design specifications,the power amplifier is not connected to the low noise amplifier directly in the circuit.instead of this,a bi-directional amplifier has been designed with a distributed structure.The structure is based on cascaded distributed topology and its matching networks are shared at input and output.The theoretical knowledge of power amplifier such as the classification,the performance parameters and the linearization technology is introduced in this thesis.Then the main design specifications and topology of low noise amplifier are also introduced.Secondly,the circuit of the switch-less bi-directional amplifier is analyzed and designed.The input of the power amplifier and the output of the low noise amplifier share a port.The output of the power amplifier and the input of the low noise amplifier share another port.The input matching circuit and output matching circuit are also studied in this thesis.And the circuit is optimized from some aspects.In this thesis,based on SMIC 0.13 um CMOS process,bi-directional amplifier is designed and realized.The simulation results and the layout of this circuits are given subsequently.The designed circuit can work in the 3-4 GHz(central frequency 3.5GHz)band.The simulation results shown that the output power,the noise figure and the S parameter of the switch-less bi-directional amplifier can meet all the requirements.When it is in transmit mode,the maximum output power of the power amplifier reaches 25.39dBm,the 1dB compression point reaches 16.3dBm,and the power added efficiency reaches 18.9%.When it is in receive mode,the gain of the low noise amplifier is greater than 20dB,the noise figure is less than 3dB,and the input third-order intercept point is higher than-10dBm.Finally,the Virtuoso is used to design the layout and post simulations,and the post-simulation results meet the design requirements basically.
Keywords/Search Tags:Bi-directional amplifier, Power Amplifier, Low Noise Amplifier
PDF Full Text Request
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