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Electrical Transport Properties Of Tungsten Oxide Nanowires With Asymmetric Contacts

Posted on:2019-02-12Degree:MasterType:Thesis
Country:ChinaCandidate:L Z WangFull Text:PDF
GTID:2428330545476595Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
At present,the traditional CMOS process devices gradually approach their limits at the physical scale,in which the memory wall problem caused by the difference between the speed of CPU and memory becomes increasingly serious,leading to the hindrance to the development of computer technology.Memristor is a basic electrical device,together with resistors,capacitors and inductors.Having the function of storing information and logical operations,it is a new type of non-volatile storage technology and has a great potential on solving the problem of computer memory wall.Due to its unique structure and excellent physical and chemical properties,one-dimensional nano-structured materials have become ideal materials for constructing nano-components.Among the numerous nanomaterials,W03 has attracted wide attention and considerable researches,with its qualified properties in electrochromism,gas sensor,resistive memory and superconductivity.This paper mainly studies the electronic transport property of W03 nanowires and the effect of Cu2+migration in the active electrode Cu on the resistance of nanowire devices.The main tasks are as follows:1.The hexagonal W03 nanowires with good monodispersity were successfully synthesized by the hydrothermal method,and the nanodevices based on single nanowire were constructed by deep ultraviolet lithography micromachining technology and metal stripping technology.2.Symmetric and asymmetric memristor prototypes were constructed with different metal electrodes to achieve the regulations on interface contact performance and its resistance behavior.3.Based on the Cu/WO3/Au nanodevices,the high and low resistance states of the device are controlled by applying a bias voltage to regulate the Cu2+ migration and the on-off state of the Cu2+ conductive filaments.It is hoped that in the subsequent studies,accurate control of the Cu2+ conductive filaments will be achieved based on the asymmetric Cu/WO3/Au nanowire devices,and the memristive properties will be applied to the actual application.
Keywords/Search Tags:WO3 nanowires, Resistance Random Access Memory, Electronic transport properties, Oxygen vacancy, Memristor
PDF Full Text Request
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