Study On The Flexible Preparation Of ?-? Multi Junction Solar Cells And The Performance Of Related Materials

?-? solar cells are widely used in space field because of their high conversion efficiency and excellent space radiation resistance,which have occupied an extremely important position in the field of solar cells.In order to expand the application range of ?-? solar cells,the research of ?-? junction flexible solar cells has been a hot topic in this field.In recent years,the research on flexible ?-? solar cells is mainly based on polyimide and other organic substrates.And many flexible solar cells have been prepared in some laboratories.However,the complex process,high cost and low rate of finished products restricted produce industrialization of flexible ?-? multi junction solar cells produce.In this paper,combined with the experiment and simulation,the antireflective coating of solar cells suitable for different spectra is successfully prepared.In the 300-1800 nm wavelength range,the four layer OS50/SiO₂/OS50/SiO₂=69/27/22/106 nm antireflective coating structure successfully reduced the average reflectance of GaAs wafer to 7.5%,and the efficiency of the flexible three junction solar cell increased from 25.61%to 33.13%.Electroplating copper method was used to transfer the cell epitaxial layer to the Cu substrate by means of mechanical thinning and chemical etching.The flexible GaInP/GaAs/GaInAs three junction solar cell is successfully prepared by the plating method on 20?m Cu substrate.The open circuit voltage of the solar cell is 2.86 V,the current density is 13.55 mA/cm²,the filling factor is 85.49%,the conversion efficiency is33.13%,which was measured under the AM 1.5G spectrum.The steady-state photoluminescence spectra and time-resolved photoluminescence test method were applied to qualitative analysis of the quality problems of InGaAsP materials.The results show that the PL intensity of InGaAsP material has been greatly improved after rapid thermal annealing of 800?.Nonequilibrium carrier lifetime also increased from 3ns to more than 10 ns at room temperature,which indicates that the high temperature rapid annealing treatment can improve the quality of InGaAsP material grown by molecular beam epitaxy.