Fabrication And Study Of The Resistive Random Access Memory Based ZnO And BP Thin Layers

With the advent of the information age,data information in daily life has been growing explosively.How to further improve the storage performance of semiconductor memory,such as higher storage density,faster write/erase speed,lower power consumption and cheaper price,has become a core issue in memory field.Among many novel nonvolatile memories,RRAMs have been demonstrated to exhibit excellent miniaturization potential down to<10 nm and to offer sub-ns operation speed,<0.1 pJ energy consumption and high-endurance.Therefore,RRAMs are also a potential alternative to the current main nonvolatile memory.With the advent of 2D materials,lots of work has been carried out about their application in RRAM devices.Experimental results prove the excellent improvement in device performance by directly adopting those materials and their derivative as work layer.In this paper,we fabricated and studied the ZnO based resistive random access memory.By changing the material of electrode,the size of electrode and the thickness of ZnO layer,the Ag(?3 0?m)/ZnO(?90nm)/Pt device has been proved to show the best switching performance.According to the different switching behaviors of devices which were fabricated under different conditions,we explore the switching mechanism of ZnO based resistive memory,and we considered that metal conduction filaments and oxygen vacancies conduction filaments coexist in Ag/ZnO/Pt devices.In addition,we fabricated and studied the black phosphorus based resistive random access memory.In the Ag/BP/Au device,the set process is indistinct,the reset voltage is stable,the ON/OFF ratio is small and the endurance needs to be improved.By analyzing the conduction mechanism of the Ag/BP/Au device,we considered that with the formation and the abruption of Ag conductive filaments,the switching behavior is performed in the Ag/BP/Au device.