Strong Electromagnetic Radiation Field Of Radio Frequency Front-end Module Effect Prediction Method

LNA(low noise amplifier)is located in the core of communication receiving system,which is the main target of typical HPM "front door" attack.Therefore,it has ten important practical significance for the research of prediction method and modeling of strong electromagnetic radiation field effect of RF front end.The purpose of this paper is to study the theoretical analysis and simulation modeling of the microwave pulse effect of the strong electromagnetic radiation field on the low noise amplifier,to further understand and master the action process and effect mechanism of the microwave pulse of the strong electromagnetic radiation field on the low noise amplifier,and to provide the technical basis and support for the RF front-end module in the strong electromagnetic radiation field environment.In this paper,firstly,the international background and significance of the test are described in detail,then the research status of RF front-end effect is described;the circuit design of low-noise amplifier is carried out and the structure of the circuit is built,and the preliminary model of low-noise amplifier is completed.Finally,the deep processing and debugging of the model are carried out,and the performance indexes of the completed LNA are compared,and the results are in line with the performance Index;analyze and study the waveform,frequency spectrum and energy of different types of strong electromagnetic pulse;focus on the electromagnetic weak link of RF front-end low-noise amplifier,summarize the causes of the failure of low-noise amplifier;simulate the field effect of RF front-end low-noise amplifier,summarize the parameters such as pulse width,power and energy of strong electromagnetic pulse The effect law of RF front end.In the RF front-end low noise amplifier effect simulation test,the paper uses the irradiation test method to calculate the simulation effect of RF front-end circuit.Finally,according to the comparison between the irradiation test results of the low-noise amplifier and the circuit simulation data,the field effect of the low-noise amplifier in the strong electromagnetic pulse environment is consistent with thesimulation results The change of pulse width,power and other parameters will affect the simulation method,which proves the validity of the field effect simulation method of the strong electromagnetic pulse.When the irradiation intensity in the test is certain,the research shows that the gain suppression time of the low noise amplifier will reach the saturation value,especially when the pulse width is 150 ns-250 ns,the saturation phenomenon is very obvious,and the gain suppression time almost keeps a constant value,not with the pulse width Change and change.Finally,the mechanism of LNA transistors is analyzed,and the effects of strong EMP on collector current,base voltage and paranoid capacitance are studied.