Laser And Electric Pulse Modulated Photoelectric Effect In Nano-film Structures

The concept of nanotechnology was originally proposed by the Nobel Prize winner,the genius physicist Richard Feynman.In 1959,Feynman predicted that human beings can use small machines to produce smaller machines,according to the final realization of the wishes of the human order-by-atom,to create products that this is the first on the description of nanotechnology.Nowadays,the importance of nanotechnology to human society is far from the original scientific wish.More and more nano-materials are widely used in electronics,chemical,medical,construction and other fields,and their related industries have become important components of the national economy.Nanotechnology always attracts the attention of the scientists all over the world.This paper is an exploratory study of the photoelectric properties of nanomaterials.By study the lateral photovoltaic effect,the surface polarity resistance effect and pulse modulated fclateral photovoltaic effect and surface polarity resistance effect to find out new physical phenomena and study new physical mechanism.Ultimately we make these nano-materials can be applied to photodetectors,resistance sensors,laser modulated memory device and other practical applications.The experimental results obtained in this paper are as follows:In the study of the lateral photovoltaic effect,we observed the presence of the lateral photovoltaic effect on the C/SiO₂/Si nanofilm,and the maximum value of the lateral photovoltage output reached 9.8mV.Through the physical mechanism of the carrier diffusion theory,we explain such phenomenon successfully.It is the first time to realize the increasing of lateral photovoltage output by applying the pulse and laser.The change rate of the maximum lateral photovoltage output is 1800%,and the change of lateral photovoltage output is nonvolatile.The pulse enhancement effect is successfully explained by the theoretical model of the charge trap effect and the relationship between the pulse amplitude and the change rate of lateral photovoltage output is also explained.These findings enrich the functionality of carbon materials and are potentially helpful for the development of devices which are based on lateral photovoltaic effect.In the study of surface polarity resistance effect,we found the laser induced surface polarity resistance phenomenon in the p-n heterojunction structure of Cu₂O/Si,and the resistivity change rate reached 212%.We successfully used the carrier diffusion and drift effect in the p-n heterojunction structure to explain the surface polarity resistance in this structure.In the structure of C/SiO₂/Si,the pulse and laser method was used to realize the change of the surface resistance.The maximum resistance change rate was 65%,and the resistance change effect is explained by the charge trap effect.We have achieved the double-modulated surface polarity resistance effect on the copper discontinuous film.Under no pulse stimulated condition,the relationship between surface resistance and the laser irradiation spot is linear,when the pulse is applied,the experimental curve of surface resistance and laser position shifts,which is a novel and interesting experimental phenomenon.These discoveries have an important effect on the development of pulses and laser modulated detectors,resistance sensors and other application.