Preparation And Optical And Electrical Properties Of Transition Metal Oxide Films

Semiconductor materials have a very wide range of applications in many fields in today's society.From high-tech fields to everyday household appliances,semiconductor materials are indispensable.It can be said that semiconductor materials are an important cornerstone for leading the technological revolution in the new century.In semiconductor materials,transition metal oxide semiconductor materials have been increasingly studied and widely used because of their diverse properties,controllable structures,various preparation proc esses,and superior performance characteristics,such as sensors,photocatalytic devices,new energy batteries,super capacitors,electrochromic devices,etc.Ta₂O₅ is a transition metal oxide semiconductor material,has a high dielectric constant,high transparency,and is widely used in non-volatile memory,high-dielectric thin film materials,photocatalysis and other fields.V₂O₅ has a sheet-like structure,good storage performance for ions,has a certain electrochromic properties,and it has a very wide range of applications in new energy batteries,optoelectronic devices,sensors and other fields.In this thesis,the Ta₂O₅ and V₂O₅ films were prepared by magnetron sputtering radio frequency method.The properties of the films were characterized by transmission lines,complex plane impedance spectroscopy,cyclic voltammetry,X-ray diffraction analysis,scanning electron microscopy,and four-probe methods.The Ta₂O₅ thin film was prepared by a magnetron sputtering radio frequency method using a metal Ta target.Different sputtering ti mes have different effects on the impeda nce characteristics of the film,but the influence of the film on the transmittance in the visible light range is not significant.The impedance characteristics and visible light transmittance of Ta₂O₅ thin films prepared under different ratio of oxygen to argon flow have certain changes.Annealing in air has an increasing effect on the impedance of the thin film material and changes the crystal structure of the thin film.The surface resistance of the Ta₂O₅ thin film was roughly measured using a four-point probe,and its resistance was found to be in the order of K?.Transparent Al₂O₃ thin film prepared by magnetron sputtering was compounded with Ta₂O₅ thin film.Nanometer mesoporous Al₂O₃ was composited with Ta₂O₅.Then I explored their influence on the photoelectric properties of the thin film.The V₂O₅ thin film material was prepared by magnetron sputtering radio frequency method.Different oxygen and argon flow have some influence on electrochromic properties of V₂O₅ thin films.Annealing in air will change the electrochromic transmittance and electroc hemical impedance of V₂O₅ thin film to some extent.The effect of different preparation conditions on the stability and reversibility of thin films was investigated by cyclic voltammetry.A reversible preparation condition was found.The surface resistance of the V₂O₅ thin film was roughly determi ned,and the effect of annealing on the surface resistance of the thin film was studied.