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Preparation Of New Multi-layers Transparent Conductive Films

Posted on:2014-03-24Degree:MasterType:Thesis
Country:ChinaCandidate:J ZuoFull Text:PDF
GTID:2250330428959129Subject:Condensed matter physics
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For years, transparent conductive thin films have been broadly applied as transparentelectrodes to various kinds of organic optoelectronic devices, such as touchscreen,organic light emitting diodes (OLED), solar cells and so on. Under the dramaticdevelopment trend of science and technology, ITO, as a representative of series ofearlier transparent conductive oxide films, has been found more and moreinsufficience. Lack of indium, high sheet resistance, mismatch with HOMO, LUMOenergy level of organic materials and so on can’t be ignored. Therefore, developmentof indium-free transparent conductive thin films with low sheet resistance and goodmatch to organic materials’energy level is very meaningful and urgent.In this article, we presented three designs of multilayer transparent conductive filmsas one of solutions to those requests above. They are V2O5/Ag/V2O5, BaO/Au/BaO,LiF/Ag/LiF.1: V2O5/Ag/V2O5(VAV) multi-layers transparent conductive film was prepared bythe combination of sol-gel technique and electron beam evaporation at roomtemperature for the first time. The experiments reveal that the multi-layer transparentconductive film has desirable photoelectrical properties with average transmission ofmore than75%(from380~780nm), mobility of16.89cm2/Vs, carrier concentrationof-1.043×1022cm-3, the sheet resistance of15.1Ω/□and work function of5.17eV.This method reduces the difficulty of fabricating V2O5/Ag/V2O5multi-layers films, providing a kind of promising transparent electrode for solar cells.2: BaO/Au/BaO multi-layers transparent conductive film was prepared by electronbeam evaporation at room temperature for the first time. After preliminaryexploration, the film presents good photoelectric properties. It has averagetransmission of more than75%(from380~780nm), mobility of16.22cm2/Vs,carrier concentration of-1.124×1022cm-3,resistivity of3.428×10-5Ω·cm. This indicates that the film has potential to beapplied to large scale photoelectric devices and provide another advantage instudying energy level match and carrier injection situation.3: LiF/Ag/LiF multi-layers transparent conductive film was prepared by electronbeam evaporation under room temperature situation for the first time. The film isfeatured with desirable ultraviolet transmission and electronic properties. It hasaverage transmission of more than70%(from300~380nm), mobility of7.485cm2/Vs, carrier concentration of-1.078×1022cm-3, resistivity of7.738×10-5Ω·cm.
Keywords/Search Tags:Sol-gel technique, electron beam evaporation, transparent conductivefilm, multi-layers, V2O5/Ag/V2O5, BaO/Au/BaO, LiF/Ag/LiF
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