Dielectric Properties Research Of (Ta₂O₅)_1-x(TiO₂)_x Ceramics

It is urgent to look for new higher-dielectric permittivity materials to replace silicon-based materials currently in the development of future ultra-large scale integration storage. This thesis started in response to such needs. Among candidate materials under consideration, tantalum pentoxide is considered to be a promising choice for applications in Capacitors and DRAMs, due to its good dielectric properties and compatibility with current microelectronic fabrication processes. Despite an increase in interest, the majority of research has been concentrated on thin films of undoped Ta2O5, revealing a lack of information regarding the properties of Ta2O5 in bulk form. Therefore, this thesis is designed to provide new insights into the preparation and properties of Ta2O5-TiO2 ceramics. This system was chosen based on earlier reports by Cava and co-workers for enhancement of the dielectric permittivity. Firstly, in this thesis we studied the dielectric properties of (Ta2O5)0.92(TiO2)0.08 ceramics formed by conventional mixed-oxide process, then, we summed up the best preparation process. Secondly, we studied the dielectric properties of (Ta2O5)1-x(TiO2)x ceramics, analyzed the influence on dielectric properties with various TiO2 adulteration, and explained its micromechanism preliminarily. The last section is introduction of the anisotropism. In this section, we based on the ceramics anisotropism of properties and structure by dry-press molding, studied the anisotropism of dielectric properties about (Ta2O5)1-x(TiO2)x ceramics via incise method. This thesis will firstly provide a new and good properties DRAM material to fill the requirement of computer, storage efficiency will be improve significantly, it will promote the development of computer. then, it will guide the preparation and micromechanism study of Ta2O5 with other oxides adulteration through theory and process, so promote development of DRAM farther. In conclusion, this task will be important on development of future computer, and also make active influence on the development of the society and economy.