Numerical Simulation Of The ELDRS Effect Accelerated Experimental Method

Enhanced low dose rate sensitivity(ELDRS)significantly impacts on the life of electronic devices used in satellite,one of the main research methods is the irradiation experiment on the ground.Low dose rate irradiation experiments need to take much time to achieve,therefore,ELDRS accelerated experimental methods become the concentration point in the field.In this paper,based on the recent research progress of ELDRS mechanism,the microscopic reaction numerical calculation framework of one-dimensional metal insulator semiconductor(MIS)structure was established.Preliminary quantitative calculation capability of stress change(including temperature,ambient hydrogen concentration and so on)on the process of this effect was attained and it can establish the fundamental relationship between the mechanism and acceleration parameters.Numerical simulation was done to judge the influence of ambient hydrogen concentration,dose rate,temperature,initial defect concentration etc.on the mainstream acceleration methods.The results showed that different stress change and initial oxide conditions probably impact the capability of ELDRS accelerated experimental methods,the relative experiments may need to take into account different influence factors systematically.