Research And Design Of 2.4GHz RF Power Amplifier Based On CMOS Technology

In the past few decades,mobile communications,satellite navigation,radio frequency identification.big data,IoT(Internet of Things),wearable technology and many other technologies obtained the unprecedented development because of the innovative development of wireless communication technology.The structure of the RF transmitter on the front-end is aiming at high integrated density,low power consumption,low cost.The RF power amplifier is the most important part of the transmitter,its performance directly determines the many index of the transmitter,Besides,it directly affects the normal operation of the whole communication system,the process technology of GaAs has always considered as the ideal manufacturing technology of RF power amplifier.Due to it is high cost and can not be compatible with the process of CMOS,so researching the RF power amplifier of the high integrated density,low power consumption with the CMOS process is the focal point.Based on the idea of amplifying constant envelope signal.class-E RF power amplifier in the 2.4GHz is designed.Firstly,this paper studies and introduces the theoretical principle of available RF power amplifiers and the related indexes,advantages and disadvantages.compares the performance of these RF power amplifiers,and leads to a guideline for the application of the amplifiers.Secondly,a RF power amplifier is designed in the TSMC 0.18 um CMOS process technology on the cadence EDA simulation platform.Different from the traditional design method.the power amplifier uses an inverter as a front drive to strengthen the driving capability.The amplifier has a differential output stage with an output power of 29 dBm and a PAE of 66%.Finally,a layout design of the circuit is completed by using cadence Virtuoso...