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1.3 Micron Nd:YAG/V:YAG Microchip Laser Research

Posted on:2018-06-29Degree:MasterType:Thesis
Country:ChinaCandidate:Q H LiuFull Text:PDF
GTID:2358330518970048Subject:Physics
Abstract/Summary:PDF Full Text Request
Diode-pumped solid-state lasers have become a focus in the field of lasers due to their many advantages such as high efficiency,high stability,compactness,and long lifetime.The laser band at 1.3 microns are in the atmospheric window and optical transmission window,its fiber low loss is close to the zero dispersion region,it can also get multiple laser lines at visible and mid-infrared bands by non-linear transformation.It is widely used in many fields such as communications,medical,fiber sensing and material processing.In this letter,based on Nd:YAG/V:YAG bonded crystal,an passively Q-switched microchip laser operating at 1338 nm under CW and quasi-CW pumping was demonstrated.In the CW pumping region,a stable Q-switched pulse output is obtained.Under the quasi-CW pumping region,the phenomenon of passive mode-lock Q-switched was achieved.The experiment results show that Nd:YAG/V:YAG bonded crystal have the advantages in obtaining 1338 nm laser with high output power and quasi-CW pumping mode can decrease the thermal affect and ensure high laser output power.The main content can be generalized as follows:1.This paper comprehensively introduces the development process of solid state laser,introduces the principle and classification of laser technology.Explained the research significance,acquisition method and application of 1.3 microns laser.The thermal effects of laser crystals and the benefits of bonded crystals are briefly described.And completed the theory and mechanism design of 1338 nm microchip laser based on Nd:YAG/V:YAG bonded crystal.2.The excellent properties of laser crystal Nd: YAG and saturated absorber V: YAG are introduced in detail.3.A microchip laser based on Nd: YAG / V: YAG bonded crystal was designed and completed.In the CW pumping region,the maximum output power of 0.73 W with a pulse width of 139 ns was obtained.Under the quasi-CW pumping region,the phenomenon of passive mode-lock Q-switched was achieved,the maximum output power was 1.01 W.The pulse width was about 80 ns with 70 ps mode-locked pulse train in the Q-switched pulse.4.Main Innovative Points: We used new crystal V:YAG as the saturated absorber ofthe laser,and bonding it together with the laser crystal.Effectively shortening the cavity length of the cavity,by direct coating at both ends of the bonded crystal.Obtained the laser output with high output power and short pulse width.
Keywords/Search Tags:All solid state lasers, Nd:YAG/V:YAG, Bonded crystal, Microchip laser, Q-switching
PDF Full Text Request
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