Resonant Tunneling Diode Material Growth And Optimization Design Research

As a new type of high speed two negative resistance nano devices,the resonant tunneling diode(RTD)is based on the quantum tunneling mechanism with quantum effect,which makes the RTD has incomparable advantages of other electronic devices.RTD has the characteristics of high speed,low voltage,low power consumption,negative resistance,bistable state and self locking.Based on this,RTD can be used not only in the field of analog circuit,such as the high frequency oscillator which can generate THz radiation source,but also can be applied to the field of digital circuits,such as to achieve complex logic unit.Therefore,it is the milestone significance to obtain good RTD device performance.In this thesis,combining with unlimited prospects for the application of terahertz and the important development trend that RTD can be used as terahertz radiation sources,and aiming at the key problems in the development of RTD,we carry out the research on the structure of RTD design and RTD optimization and epitaxial material growth etc..The main work is as follow:1.Structural design and optimization of RTD:in the foundation of theoretical research on resonant tunneling,epitaxial material structure design and optimization of RTD,taking InP as substrate,have been researched.And controlling the composition of indium is to obtain higher oscillation frequency and output power.At last,improve the peak valley current ratio of RTD,and achieve higher result of 10.33:1.2.The resonant tunneling diode epitaxial material growth and structure test analysis:the growth of RTD epitaxial material structure is made by the metal organic chemical vapor deposition(MOCVD),and then use scanning electron microscopy(SEM),transmission electron microscopy(TEM)and X ray diffraction(XRD)to characterize and test the epitaxial material.RTD epitaxial wafer is better relatively.3.The development and utilization of new materials with high performance are important,so the GaN-based RTD structure design,modeling and simulation have been researched to obtain better negative differential resistance.Peak valley current ratio of RTD can reach 4.6:1,and the peak voltage is small,Vp=0.2V.In this thesis,the epitaxial material system,structural parameters,fabrication process of RTD and RTD optimization design of novel semiconductor materials are studied deeply,and the performance of RTD devices is improved.For further study of RTD.this thesis has laid a solid foundation.