Design And Analyze Of MOCVD System Reactor

Metal Organic Chemical Vapor Deposition (MOCVD), which was firstly mentioned in 1960s, and had come through the period of development between 1970s and 1980s, has already became the key growth technologies in material epitaxial growth of GaAs or InN after 1990s. Considering the performance of materials and devices and cost, the advantage of MOCVD is unique.Because of the enormous markets in GaN-based blue light LEDs, the study of MOCVD system will meet a massive market demand as well as the huge economic efficiency. But as advantages are accompanied by disadvantages, during enlarging the industrial production scale, the blockage on technology between countries became more and more serious, and it hinder the research progress seriously. According to the present research situation and the trend of development of group III nitride semiconductor, this kind of situation cannot be changed in a short period. As either the price or maintenance cost on the imported MOCVD equipment is extremely expensive, the correlation domain research in our country should rely on our own equipment and technology. So, we must realize the industrial production on equipment as soon as possible.The study of MOCVD system is still underway in our country, many technologies remain immature, and many problems are unsolved. The researches in China's mainland have a greet disparity with the international standard, such as intellectual property rights, cost control, computer simulation, etc. For many reasons, making the MOCVD system became impossible to most research organizations.In the dissertation, the structure of MOCVD system are studied, especially the reactor is designed and improved. The major achievements are listed.1. Firstly, a new home-made MOCVD system for gallium nitride growth is developed successfully. By optimizing the reactor of the first XiDian MOCVD system, we designed a new reactor which can grow 3-piece substrates (2 inches) once. We solved the difficult problems, such as the design of the rotation part for the graphite susceptors, the synchronization heating of 3 graphite susceptors, the accurate growth monitor and control, the gas current distribution and graphite susceptor temperature distribution design in reaction chamber. 2. Secondly, the simulation analysis of the temperature field and the gas flow field in our new home-made MOCVD reactor were completed. By the method of finite element modelling analysis, the electromagnetic distribution and the induction joule heat distribution of the reactor and the graphite susceptor were gained, also the pressure chart and the speed flow chart in reactor. These theoretically proved the greet advantage of our home-made MOCVD equipments.