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Calculations Of Efficiency Of Ⅲ-Ⅴ Compound Quantum Well Solar Cell And The Study Of Its Properties

Posted on:2014-01-31Degree:MasterType:Thesis
Country:ChinaCandidate:H M YanFull Text:PDF
GTID:2232330395992154Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Mesoscopic physics effects mainly refers to the mesoscopic effect which iscorresponding to the physical effects of the supporting engineering applications. Such asmesoscopic piezoresistice effect, mesoscopic piezoelectric effect, mesoscopic elastic-opticeffect, mesoscopic acoustooptical effect and mesoscopic photoelectric effect. Based on themesoscopic photoelectric effect, this thesis mainly calculate the theoretical efficiencyof III-Ⅴ compound quantum well solar cell and researchits properties.Firstly, under ideal conditions, according to the voltage and amperes characteristics ofthe solar cell, it can be deduced and draw the functional relationship between the conversionefficiency of the solar cell and the wavelength of incident light. By the theoretical analysis itcan be drawn, with increasing wavelength, efficiency increases monotonically, but when itreaches a certain wavelength (corresponding to the band gap of the battery materials), theefficiency will decline rapidly.Secondly, proceed from the optical parameters of the solar cell, such as short-circuitcurrent, open circuit voltage and fill factor. Then, it is deduced the expression of theconversion efficiency of the solar cell. Under ideal conditions, the paper discusses andanalysis the relationship between the number of important parameters of the solar cell withthe incident light intensity, the results showed that the conversion efficiency increases withincreasing incident light intensity.Thirdly, the paper describes the excellent performance of the new material InGaN solarcells, establish a model of InGaN solar cells, and it has made a series of assumptions. It wastheoretically calculated the open circuit voltage, short-circuit current and the conversionefficiency of InGaN single junction, double junction solar cell. It analyzes the calculation results, therefore, it is concluded that the InGaN single junction and dual-junction solar cellconversion efficiency is higher than the theoretical value of the current efficiency whichsolar cell commonly used semiconductor materials, and to achieve the purpose of reducingcosts.Quantum well structure not only meet the lattice matching requirements, but also has anadjustable effective band gap. It is an effective way to improve the conversion efficiency ofsolar cells. Because of the introduction of a quantum well structure, it can extend the photonenergy’s absorbed range of the solar cells, and it increases the number of the number ofphotons absorbed, thereby improving the short circuit current. Its conversion efficiency iscalculated by using MATLAB simulation, and finally it made a preliminary analysis of theeffects brought by the quantum well structure.
Keywords/Search Tags:Mesoscopic photoelectric effect, Conversion efficiency, InGaN solar cell, AlGaAs quantum well solar cell, impact ionization effect
PDF Full Text Request
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