A Research On Test Method Of Radiation Effect Of Ferroelectric Random Access Memory

There are a large number of cosmic rays and charged particles in the space environment.Electronic devices are required to have good radiation resistance,and the memory is an important element for storing important data and controlling instructions in aerospace electronic systems.Radiation-induced memory failures can cause loss of important system instructions or data disturbances.Ferroelectric random access memories have been proved to meet the requirements of space applications for miniaturization,low power consumption and long life of electronic devices,and it has a good potential for space applications.A large number of tests have shown that ferroelectric materials are highly resistant to radiation,so ferroelectric random access memories are considered as potential candidates for space applications.At present,the domestic research about the radiation effect of ferroelectric memory has just been started,and the test method is still not perfect.There are many problems waiting to be researched and explored in the testing process of ferroelectric memory radiation effects,test systems,failure modes,and failure analysis.The accurate,fast,and fully functional test system for ferroelectric memory radiation effects is the basis of the research of radio-resistive ferroelectric memories,providing an important reference for the device selection of aerospace memory systems,and it is a prerequisite for guaranteeing the reliability of spacecraft applications,with high engineering and economic significance.Based on the above background,this paper studies the structure and working principle of ferroelectric memory,the single-particle effect and total dose effect of ferroelectric memory,and the ground simulation test method.The details are as follows:Based on the March C-ferroelectric memory test method research,the failure behavior analysis of the memory cells that have been injected into the ferroelectric memory with various electrical defects was completed.Two failures of the 2x2 1T1 C ferroelectric memory array were found.The improved March C-The algorithm could cover the types of faults in ferroelectric memory more fully and summarize the corresponding relationship between fault types and electrical faults in ferroelectric memory.The single-particle test method for ferroelectric memory heavy ion accelerator was studied.The test system for single-particle effect of ferroelectric memory heavy ion accelerator was designed and manufactured.The improved March C-algorithm was applied to single-particle effect test of ferroelectric memory.The faults of the six types of ferroelectric memories found in the process were introduced in detail and analyzed by fault location inference.The total dose effect test method of ferroelectric memory was studied.The design and construction of the total dose effect test system was completed.The total dose effect experiment of ferroelectric memory under the three sources of Co-60? ray source,electron accelerator and X-ray microbeam was performed.The differences in the three test radiation sources were analyzed in detail.The test procedures for ferroelectric memory under three kinds of radiation sources were carefully recorded.The results of the ferroelectric memory effect test were compared and analyzed.Three kinds of radiation sources were discussed.The differences and application characteristics of the total dose effect testing methods under three kinds of radiation sources were discussed.