Device Structure And Application Of SiGe:C HBT Based On Standard 0.35?m Technology

In the past few years,higher frequency,smaller size,lower power consumption and lower cost are development trend of smiconductor IC and device as 4G and 5G telecommunicatin technology rapid development.The performance comparing with SiGe:C HBT and ?-? semiconductor,SiGe:C HBT has almost the same performance.The advantage of SiGe:C HBT is low cost and the combination with CMOS technology which is called SiGe BiCMOS technology.Current bipolar transistor process requires higher frequency and thinner base,and C element add into the base is a good method to suppress impurities out diffusion and enhance the frequency.C component is widely used in HF and UHFSiGe devices in decades.In this paper,we first analyzed the external expansion of boron(B)in the C-doped base.The experimental results were compared with the non-doped C base material;boron out diffusion rate was decreased by 91%.This conclusions is a theoretical support of SiGe: C HBT design(high-frequency devices in the preparation of thin base area is more difficult);the SiGe:C HBT emitter,base,collector doping and structure design,respectively,to explore the parameters of each zone for the effect of device performance.The numerical simulation results show that the current gain of the device is 200,the characteristic frequency is 75 GHz,the breakdown voltage BVceo is 4.4V.In this paper,a SiGe device with Split Buried Floating Layer(SBFL)structure is proposed,and the influence of the super-junction on the breakdown performance of the device is studied.SBFL structure is mainly used to split the principle of the electric field,by changing the doping to improve the breakdown characteristics.In this paper,the principle of this device structure is analyzed in detail.The numerical simulation results show that the floating structure has a significant improvement on the breakdown characteristics of the device.The characteristics of SiGe: C HBT was obtained from FAB process.The current gain of the device was 210,the characteristic frequency was 72 GHz,and the breakdown voltage was 3.3V.