Sige Hbt Monolithic Integrated Circuit

Low noise amplifier(LNA) is widely used in front end of a received set of mobile communication,wireless radio,blueteech technology and so on。The active device is the core of the circuit and has significant effects on the whole equipment, therefore, the design of the active device is vital in LNA. According to the characteristics of SiGe HBT, such as holding high performance as GaAs which can meet the demand with RF ICs and having low cost because of the compatibility with Si technology, SiGe HBT has become one of the hot fields in the world.Through the research of SiGe material characteristic and growth technology, the optimization of SiGe HBT device parameters is performanced. After the theoretical check of the vital parameters, the device and the layout of the monolithic integrated circuit LNA are designed with the characteristics of the passive device and the process.1,Through the theoretical analysis and the MEDICI simulation, according to the design directive, the structural parameters are designed comprehensively, including the dopant concentration and the depth of the emitter, the base dopant concentration and the depth (especially the Ge ratio), the dopant concentration and the depth of the collector.2,In order to solve the phenomenon of the outdiffusion of the base dopant, two solutions are suggested: 1) the SiGe:C base can effectively solve the outdiffusion problem; 2) the undoped buffer layer can constrict the outdiffusion phenomenon.3,After the assuredness of the dopant and the depth of the layers, associating the chief technology directive, the structural parameters of the device are obtained and theoretically checked.4,The passive device in the MMIC has different features with the passive device in the general integrated ciruit. In the research of the design theory of the MMIC passive devices and the process, the passive device needed in the circuit are designed.5,Through the structural parameters of the SiGe HBT, associating the passive devices, the layout of the monolithic integrated circuit LNA is obtained, and the technology of the circuit and the vital process process are introduced. Through the analysis and the design of SiGe HBT, two solutions of the base...