Design And Performance Analysis Of AlGaInAs/InP High Linearity Semiconductor Lasers

This article is based on the national "863" project,aiming at the "high linear semiconductor laser" topic,in order to optimize the 1.31?m wavelength quantum well laser suitable for long-distance optical fiber communication systems,the number of quantum wells,potential well region thickness and potential are simulated using ALDS simulation.The thickness of the barrier region was optimized;in order to overcome the problems of misfit dislocations,threading dislocations and inverting domains caused by the mismatch of Si and InP lattices in the process of the combination of microelectronics and optoelectronics,the Si substrate was used in the Si substrate.A method for epitaxially growing an InP buffer layer by epitaxial growth is used to design an AlGaInAs high-power laser;in order to solve the large-capacity problem that easily occurs in the prior art,a new manufacturing method is proposed,which skips the buffer layer and directly The method of setting the current zone in the working layer of the chip reduces the current resistance,thereby achieving the purpose of reducing the capacitance;finally,the measured laser chip is designed by measuring the frequency bandwidth,threshold current,photoelectric characteristics and nonlinear distortion of the finished chip.All parameters meet the requirements of the project indicators.Based on the number of quantum wells,theoretical analysis shows that too many wells will increase the thickness of the active region,which will increase the current resistance and reduce the chip quality.The number of wells is too small,which limits the ability of the electrons.It will become weaker,which in turn will reduce radiation recombination and make the chip unable to reach a certain power.The structure of the chip was simulated by ALDS,and the photoelectric characteristics of the chip were analyzed.The optimum number of wells was found to be 10.Based on the selection of the thickness of the barrier layer and the well layer,the effects of the thickness of the well region and the thickness of the barrier region on the luminescence efficiency of the laser are studied.By comparing the output parameters of different lasers with different thickness of the well layer and barrier layer,the simulation results are obtained.When the thickness of the well region is 5 nm and the thickness of the barrier region is 10 nm,the output power of the laser chip reaches a maximum and the threshold current is obtained.The lowest value of 13.9mA,the side mode suppression ratio reached the highest value of 35.76 dB,the laser's luminous efficiency is optimal.In the design of the laser buffer layer structure,to overcome the problems of misfit dislocations,threading dislocations,and antiphase domains caused by the mismatch of Si and InP lattices in the process of the combination of microelectronics technology and optoelectronic technology,the Si substrate is engraved Corrosion trenches,and the design of epitaxial growth of six different InP buffer layer,the use of Si trench substrate,high aspect ratio restrictions and low-temperature low-pressure growth multilayer In P buffer layer method,effectively solved the Si and InP material lattice Mismatch causes dislocations and other problems,and controls the extension of the anti-phase domain to the epitaxial layer in the vertical direction.Aiming at the problem that high-speed quantum well lasers easily generate large capacitance in the prior art,thereby affecting the spectral characteristics,on the basis of using MOCVD material epitaxial growth process,in order to suppress the over-capacitance problem in the prior art,a skip buffer layer is adopted.The method of setting the current area directly in the working layer of the chip reduces the current resistance,thereby achieving the purpose of reducing the capacitance.In this paper,the performance of four finished laser chips in the laser array chip is tested,and the frequency bandwidth,threshold current,optical output power,center wavelength,side mode suppression ratio,PIV curve,slope efficiency,and nonlinearity are performed by the test equipment.Measurements of distortion,etc.,and performance parameters of the laser array chip all meet the requirements of the project.