Study On The Attitude Technology Of Photolithographic Probe Based On SP Direct Write

Semiconductor chip manufacturing industry is developing rapidly,the highest level of feature size is decreasing,and the feature size has reached 7nm,and the price of photolithography is rising(up to about 100 million euros).On the other hand,the demand for reasonable feature size and low-cost lithography technology is increasing.Direct write lithography based on the principle of surface plasmon(SP)has become a hot spot of research,which has the characteristics of breaking through the limit of light diffraction,low cost of equipment and no need to mask the film.On the basis of the "SP contact nano direct writing experimental platform",which has just been set up by the project group,this paper further studies the implementation technology of SP direct write lithography,the calibration of the attitude of the photolithography head,and the improvement of the hinges structure of the photolithography head.In this paper,the SP direct writing photolithography process is explored,and the specific process is put forward.The photolithography head leveling is realized.The photolithography effect of the diameter 59nm point is obtained(which is close to the 30nm point of the theoretical analysis value),and it can get out of the line initially and verify the feasibility of the principle of the experimental prototype.At the same time,the experiment also revealed two main problems of low alignment accuracy and low attitude stability of the lithography head.In view of the low precision of the attitude leveling of the photolithography head,this paper considers that it is a lack of quantitative calibration method for the spatial attitude of the photolithography head,which leads to low calibration and too long time consuming.In this paper,a laser triangulation based detection optical path model and a leveling scheme are proposed,and the attitude detection and positioning algorithm of the photolithography head and the attitude detection and positioning algorithm of silicon wafer are derived.The optical path structure parameters and key optical components are determined,and the detection leveling system is designed and built.The software interface of the leveling system is compiled,and the error of the leveling system is analyzed.Aiming at solve the low stability problem of the lithography head,this paper re-analyzes and improves the suspension structure of the lithography head,and proposes a new structure model of the double hinge.With the reference value of the hinge vertical stiffness,deflection stiffness and its ratio,the size of the double hinge structure is analyzed and determined by mechanical analysis and finite element simulation,and compared with the original design,the quality of the double hinge structure is preliminarily determined.The paper aims to improve and optimize the SP contact nano direct writing experimental platform,and try to solve the key problems found in the experiment,and contribute to the final realization of the equipment.