Research On Integrated Transceiver Chip Applied To Optical Interconnection

With the rapid development of information technology,new applications such as big data and cloud computing have generated higher demand for the performance of data centers.At present,with the new business requirements,companies like large technology companies,banks,operators and so on demand higher and higher computing resource,and the size of computing clusters has also increased significantly.The information flow between the frame and the data centers are increasing very quickly.Therefore,due to its high energy consumption,low bandwidth and short transmission distance,the traditional copper interconnection technology is now replaced by the optical interconnection technology.In the current solutions,the optical interconnection module is still composed of the discrete transmission module and the receiving module.So the integration degree is low.If the vertical integration of the laser and detector can be realized,the integration degree of the module can be in creased and the packaging complexity can be reduced.Because of the difficulty in the design and process,few research teams do research about the integration of lasers and PDs in vertical direction.In this thesis,we propose a vertical and coaxial integration scheme of the vertical cavity surface emitting laser and the RCE photo-detector.Optical signal transmitting and receiving from same surface of the integrated chip will be realized,which can greatly improve the optical interconnection tranceiving module's integration level and simplify its packging cost.The main contents and innovation points of this thesis include:1.Based on the theory of Thin film optics,according to the design demands,we proposed a new kind of dielectric film reflector which have the structure characteristics of intracavity DBR.The reflector can realize that,the reflection at the wavelength of ?RCE-PD is low and the reflection at the wavelength of ?TCSEL is high.As a part of the integrated chip,this reflector plays an important role in the optical decoupling of the laser and the detector.2.According to design demands of the new reflector,we propeosed an optimization design method of the reflectors's reflection spectrum.This method can simplified mirror structure,take pratical use into consideration.And it can greatly reduced the complexity of the integrated chip's designing.3.Using the new reflector,we proposed a new decoupling structure.In this structure,ensuring the best working condition of the laser,the equivalent top mirror of the detector is compensated for the reflection at?RCE-PD,which makes the reflection at ?RCE-PD of the equivalent top mirror of the detector meeting the requirements.This technology ensures the realization of integrated chip devices,and provides a new idea for the optimization of vertical integrated multi cavity devices in the future.4.We proposed a transceiver chip based on the vertical integrated structure of laser and detector.It realizes the optical decoupling of the RCE detector and the vertical cavity surface emitting laser.This chip can perform the coaxial transceiver on the same light signal at the same end.The lasing wavelength of the laser is 850nm,the threshold current is 1.2mA,the slope efficiency is 0.66W/A.The detector works at the 810nm and quantum efficiency of 90.24%.At high speed working state,the small signal modulation bandwidth of the laser is 3GHz,and the 3dB response bandwidth of the detector is 27GHz.5.We design an electrical isolation structure used for integrated chip unit devices.Through simulation,it is proved that the structure can obtain good electrical isolation performance in the 100GHz bandwidth.6.To realize the integrated chip,we proposed the process flow and key technology of integrated chip.The Si02 film sputtering deposition rate of 1.36A/s,uniformity is less than 4%;We develop the Cl2/Ar/02 etching process,the etching rate can be adjusted accurately and controlled between 6nm-65nm/min and the etching surface without etching effect;The Si02 RIE etching process,the etching rate is 28nm/min,and photoresist choose the ratio is 3:1.