Design And Research Of W-Band InP HEMT Power Amplifier

In the past three decades,MMIC power amplifier by virtue of the general use in civilian communications and military systems,has gained extensive attention all over the world,driving the rapid development of MMIC power amplifier.W-band millimeter-wave communication system can transfer more information,which is important for broadening the communication spectrum.As an important part of the W-band millimeter-wave communication system,W-band power amplifier has attracted the attention of many domestic and foreign research institutions.Indium Phosphide High Electron Mobility Transistor?InP HEMT?is widely used in high-speed,high-frequency circuits because of its ultra-high electron mobility.In addition to high gain,low noise and other excellent features,it is recognized as the best choice for ultra-high-speed power amplifiers and low noise amplifiers.In recent years,foreign reports based on advanced InP HEMT technology has achieved lots of results in the W-band,D-band,G-band or even terahertz band power amplifiers.However,the domestic InP HEMT process is relatively backward and the design technology of InP-based power amplifier is not yet mature.At present,most structures of the domestic InP HEMT power amplifiers are relatively simple.Other indicators such as output power can not meet the application requirements.With foreign embargo on high-frequency circuits,it is important to explore the design methods and design the high-performance W-band InP-based power amplifier based on domestic InP HEMT process.As the most effective means to improve the output power,power combining technology has been widely used in the reports of foreign W-band InP-based power amplifiers.In the contrast,it is lack of research in the domestic W-band InP-based power amplifier design.Therefore,based on the domestic 70nm InP HEMT process,this paper carries out design and research of the W-band power amplifier.The principle of power combining technology is analyzed,and a novel power combining structure is proposed.The design method of W-band power amplifier is explored and summarized.This paper focuses on the design and research of the W-band InP HEMT power amplifier,and the following work is completed in this paper:?1?Introduced the main parameters to measure the performance of power amplifier and the device principle of InP HEMT.Based on the 70nm InP HEMT process developed by the13th Research Institute Of China Electronics Technology Group Corporation,a single-stage power amplifier with a center frequency of 94GHz is designed.At the input power of 9d Bm,the output power is 13.76dBm,power additional efficiency is 18.1%,and the small signal gain S₂₁ is 9.6dB.The design flow and technical points of the power amplifier are described in detail through the design of the single-stage power amplifier which is used as an output stage power unit for subsequent power combining structural power amplifiers.?2?Introduced the power combining technique,analyzed the principle of Wilkinson power splitter with the odd-even mode analytical method.The compact Wilkinson power splitter capable of matching to arbitrary complex impedance is designed according to the requirements of this paper.And then,in the examples,the area of the improved structure is only about 50%before the improvement,and the network loss is small,the port matching is good.It is proved that the power splitter designed in this paper can realize the function of arbitrary complex impedance matching through the theoretical analysis and instance verification.And the port matching characteristic is also proved to be excellent.The chip area will be greatly reduced with the power splitter designed in this paper because of the compact structure.?3?Adopted with multi-level cascade and parallel matching techniques,a four-stage eight-way power combining W-band InP HEMT power amplifier is designed by using the compact Wilkinson power splitter capable of matching to arbitrary complex impedance.In the W-band?75GHz to 110GHz?,the gain S₂₁ of the power amplifier is greater than 21dB.When the input power is 8.5dBm and the operating frequency is 94GHz,the output power is 19.6dBm and the corresponding power gain is 11dB.