Study On The Thermal-mechanical Response Of TSV With Electron-thermal-mechanical Coupling

With the rapid development of electronic circuits and the limited of the two-dimensional planar circuit technology,the three-dimensional integrated circuits has attractted the semiconductor industry and researchers' attention and becomes the main research direction,for its high integration density,high speed,low power consumption and excellent chip performance.In terms of three-dimensional integrated circuits,the Silicon hole technology(Through Silicon Via,TSV)is the key point of 3D integration technology.TSV connects different chip vertically,which makes full use of the vertical space resources.Now,TSV technology is not mature.There are still many problems need to be solved.Among them,the industry and researchers are more concerned about the TSV reliability problems.Since the TSV work environment is very complex,(there are multiple physical fields),it is very important to accurately predict the reliability of TSV in three-dimensional integrated circuit,and guarantee the normal work of the TSV.Therefore,using electrical-thermal-mechanical field coupling to analysis TSV thermo-dynamical response in different combination of conditions is very necessary.Based on the above problems,this paper establishes three-electrical-thermal-mechanical coupling mathematical model of the second order partial differential equation.By using the branch points and test function,this paper transforms the strong form strong to weak form.Then,we analyze TSV thermo-dynamical response under different condition.The detail research results are as follows:1.The mathematical model of electro-thermal-force multi-field coupling of TSV is established by using the fundamental theory of electromagnetic field,thermal field and force field.Then we transform the TSV multi-field coupling mathematical model to weakly generated partial differential equations,which used in Comsol software.2.In this paper,a single TSV is used to study the thermo-dynamical response under DC,periodic and double exponential pulse injection.In term of single TSV thermo-dynamical response,we discuss the influence of TSV structure,incentive type and intensity of excitation.For the single-column insulation TSV,we use the difference analysis method to analyze the thermo-dynamical response of TSV and establish the maximum temperature and mechanics equivalent of insulation TSV structural parameters.3.Through electro-thermal-force multi-physics coupling model,we analysis the thermo-dynamical response in TSV violation and TSV crosstalk case.Choosing the distance between TSV and structure size as the dependent variable,we analysis the effects of different factors.We use the difference analysis method to analyze the thermo-dynamical response in TSV crosstalk case.Based on the software Matlab,we establish the maximum temperature and mechanics equivalent of factors in TSV crosstalk case with the data obtained by TSV electro-thermal-force multi-field coupling simulation.This mathematical model of maximum temperature and mechanics equivalent can predict the reliability of TSV in 3D integrated circuits.In this paper,the TSV thermodynamic response of different structures under different conditions is analyzed by using the electro-thermal-force multi-field coupling model.On the basis of the above study,we can obtain TSV thermodynamic response in different structure size,excitation type and intensity.The results of the study are helpful for designers to predict the reliability of TSV in 3D integrated circuits and play a very significant role in reducing the design cost of circuits.