Defect Analysis And Solution Of Large Scale Produce Of Silicon Dioxide Films By CVD

In the VLSI production field,the SiO₂ dielectric layer,which is one part of electronic component,is made by CVD technology.The thin films which is produced by CVD combine matrix tightly,have well-proportioned density,control components easily and have fast deposition speed.However,the films made by CVD always have thickness issue,crystal defects and high particle problem,which make electronic component have low performance.This thesis analyzes the generating mechanism of SiO₂ film,makes a introduction of main equipment parts and process,treats the temperature effect in films deposition process,acquires the optimal temperature by SiO₂ deposition experiments in different temperatures.The thesis also analyzes the reaction of phosphorus and oxygen,which occurs in SiO₂ deposition process doped with phosphorus,invents a weak acid cleaning method to solve the crystal defect on silica film surface.This thesis simulates failure of each unit in order to research the effect on particle of these units'failure,particle defects are reduced obviously through improves some key parts of the device.With the improvements above-mentioned,the thickness and crystal defect are solved,and the particles are reduced obviously,yield of production raises,create large economy benefit for enterprise.