Synthesis And Optoelectronic Properties Of InP Quantum Dot/Carbon Nanomaterial Hybrids

Indium phosphide quantum dot(InP)is hypotoxicity which could be applied to many fields such as LED,solar cells et al,but there are many problems such as low quantum yield(QY),hard mass production and hard to be fixed on device,restricting the application of InP seriously.In this paper,InP was researched including:1.Prepare the InP by hot injection.Tris(dimethylamino)phosphine(P(N(CH3)2)3)was selected to be phosphorus source which is stable and cheap.The morphology and optical properties were researched under different environments.The crystal size(band gap)has obvious changing rules with the variation of InP growing time,InP growing temperature and the content of Zinc chloride.Core-shell structure was adopted to deal with the low QY.ZnS shell was made outside the InP core.The parameters of ZnS were analyzed and high QY(43.4%)InP/ZnS was made.The fluorescence spectra peak(505nm-630nm)could be controlled by changing the synthesis parameters.2.An efficient way was invented to prepare InP/carbon nanomaterial hybrids.The carbon nanomaterials include graphene and carbon nanotube.InP/RGO hybrids and InP/CNT hybrids were achieved by synthesizing InP and functional carbon nanomaterial at same time.3.The oleylamine on the InP and its hybrids could be efficient removed by surface modification which will greatly improve the photoelectric property of materials.Results show that the no photoelectric respond materials show well photoelectric property after ligand exchange.4.Photoelectric property of InP/carbon nanomaterial devices with different mole ratio was researched.I-V and I-T curves show regular changing under different wavelength and intensity lights,which prove the compound condition of hybrids is great.Linear I-V curves reveal the reliable ohmic contact between hybrids and devices.