Study On Photoelectric Properties Of Novel The New Two-Dimensional Crystal Single Layer Semiconductor Materials

Concerned about the new two-dimensional crystal single-layer black phos-phorus (SLBP) in 2014,single-layer black phosphorus have attracted a consid-erable amount of attention due to their unique electron mobility and switching ratio properties. The experimental exfoliation of many-layer phosphorene has garnered immense interest, due to the presence of in thin film electronics, optical devices and anisotropic sensitive new electronic components, making it a poten-tial candidate for nanoelectronic devices. Because of phosphorescent nanorib-bons are the quasi-one-dimensional nanomaterial, the major factor that have the great influence upon the electronic structure of phosphorescent nanoribbons is the geometrical structure.There is a important significance studying the geometri-cal structure of the nanoribbons. According to the different boundary structures,the phosphorescent nanoribbons can be divided into zigzag-zigzag PNRs, zigzag-beard PNRs, double-beard-type phosphorescent nanoribbons (zigzag-beard P-NRs) Beard-beard PNRs and armchair-type armchair PNRs with bordered arm-chairs.The band structures of strained phosphorene and phosphorene nanoribbons are examined using a tight binding Hamiltonian that is directly related to the type and magnitude of strain.We study the cases when applying a compressive biaxial in-plane strain and perpendicular tensile strain in ranges,respectively. The band gap is found to be narrowed by compressive in-plane strain and tensile vertical strain. We also examine their influence of strain on the quasitflat band of different edges of phosphorene nanoribbons.