Study Of Chemical Vapor Depostion Of Monolayer Molybdenum Disulfide

Molybdenum disulfide?MoS₂?is a graphene-like material,single-layer MoS₂ is a direct bandgap semiconductor which complements the zero-band gap graphene.As single-layer MoS₂ has good optoelectronic properties,as the best choice for the atomic-scale optoelectronic devices.However,it is very difficult to fabricate single-layer MoS₂ with large area and large crystal size,which cannot meet the requirement of large-scale manufacture of optoelectronic devices.In this paper,we used chemical vapor deposition?CVD?to grow large-sized,high-quality single-layer MoS₂,which involves two different methods,i.e.homogeneous nucleation and heterogeneous nucleation.In the heterogeneous nucleation method,graphene oxide quantum dots,graphene quantum dots and h-BN were used as nucleating agents to increase the size and repetition rate of single-layer MoS₂.And the single-layer MoS₂ grown was characterized by atomic force microscope,scanning electron microscope,photoluminescence?PL?spectroscopy and Raman spectroscopy.The rhombic MoS₂ flakes with different colors were also found during the growth.The purple diamond-like MoS₂ flakes were found to have good PL intensity,and its PL intensity is eight times than the single-layer MoS₂ prepared by micro-mechanical exfoliation method.This study will make single-layer MoS₂ in optoelectronic devices with wide range of applications.