The Influence Of Base Change On The Performance Of P-i-n Type Diode

Comparing the p-i-n type diode with the p-n type one, the p-i-n type diode has an intrinsic region (called as base region). This makes it more widely used in the fields of power electronics and optoelectronics, such as rectification, limiting, radio frequency, photoelectric detector and so on.Variations in the base region can influence the performance of the diode.The characteristics of the barrier injection transit-time (BARITT)diodes with different components of In(Al)xGa(1-x)N materials were simulated by the MATLAB. The relation of current vs. voltage, the one of conductance vs. voltage and the one of the adjacent point position between the low field and the base region vs. voltage were analyzed. The nagative resistance characteristics and the relations of conductance vs.susceptance under different frequencies of the BARITT diodes with different materials were compared.A fast recovery diode of p+-type nanocrystalline-Si with n--type crystalline-Si with n+-type nanocrystalline-Si ((p+)nc-Si/(n-)c-Si/(n+)nc-Si) was fabricated by the plasma enhanced chemical vapor deposition(PECVD) technique. Further, a p+-type nanocrystalline SiC ((p+)nc-SiC)buried layer in the front of the n-/n+ junction, namely a prototypical structure for controlling injection of backside holes (CIBH) was formed in the diode of (p+)nc-Si/(n-)c-Si/(n+)nc-Si. The relations of capacitance vs. voltage, current vs. voltage of the diodes with and without (p+)nc-SiC were investigated. The reverse recovery behaviors of the diodes with and without (p+)nc-SiC were compared. The important influences of(p+)nc-SiC on the static and dynamic state electronic characteristics of the diode were discussed. The results indicate that the performances of anti-avalanche and reverse recovery of the diode with the (p+)nc-SiC are improved.