Research On The Undesirable Characteristics Of The Large Current IGBT Module And Its Improved Method

With the rapid development of large-scale new energy access,the demands of environment and quality of power supply are increasing day by day.The Insulated Gate Bipolar Transistor(IGBT)as the representative of a new generation of high voltage power electronic devices and a new generation technology has become an important development direction of future high voltage power electronic technology.IGBT converter valve module is the basic unit of voltage source converter.Therefore,in order to develop a new generation of power electronic equipment,make it become better performance,first of all to IGBT converter valve module research.Application of converter valve module in IGBT,the high current IGBT converter valve module,the adverse effects of bad properties in the switch process will become particularly prominent.because these bad features include the absorption circuit,and the Fast Recovery Diode(FRD),switch voltage and current flow by the continued process of stray inductance and capacitance,diode module caused by overshoot and loss,serious over-voltage phenomenon will lead to IGBTs working out of SOA and cumulative switching losses will cause the temperature effect,causes IGBT effect of fatigue damage,it will reduce the life of high current IGBT converter valve module.In view of the above problems,in this paper the work is as following:Analysis of the high current IGBT converter valve switch module,including the static and dynamic characteristics of gate charge effect,self-locking effect,safe and stable operation of IGBTs.Study the reasons and influence mechanism of the bad characteristics of high current IGBT converter valve switch module in the process,and set up the simulation model in saber,the simulation shows that these high current IGBT converter valve module of the switching process and serious adverse effects harm.Finally,the corresponding control measures are put forward for each influence factor,and carried out the corresponding simulation and experiment.An improved method for the bad characteristics of large current IGBT switches is proposed,which is The Active Voltage Control with the reference waveform are further optimized.Saber simulation results show that it can achieve the desired results.Finally,the experimental results show that the simulation results are basically consistent with the simulation results.