Research On The Characteristics Of SiC MOSFET And Applications In Induction Heating Power Supply

At present,the induction heating power supply technology is mainly towards the direction of high power,high frequency and intelligent control technology.However,even if the induction heating power supply uses the soft switch technology,the total loss of the device is still more than 80% of the power of the device itself from the switching loss,which restricts the further improvement of the power supply frequency.As one of the new silicon carbide power devices,SiC MOSFET devices have the advantages of low turn-on resistance,high operating frequency and high temperature resistance.However,researchers are still exploring the work characteristics of the devices,the design of the corresponding driving circuit,new problems in the application process and so on.It is very necessary to study the characteristics of power devices before the design of power electronics applications.In this paper,firstly,the device characteristics of SiC MOSFET are studied in detail by combining with the data manual provided by device manufacturers and the relevant experiments and simulations.We selected IXYS two parameters of similar device IXFN50N120 SiC(1200V/47A)and IXFN38N100Q2(100 0V/38A)as the test object,and the static and dynamic characteristics of the two are tested.Considering the different characteristics of SiC MOSFET devices,a driver chip is designed by using the chip 1EDI60N12 AF and IXDD630,which is suitable for working at high frequency power engineering application.Then,the driving circuit is tested by the double pulse experiment,and the optimal gate resistance and snubber circuit parameters are determined.In addition,in order to better apply SiC MOSFET to high frequency induction heating power supply,and further realize its industrial value,the topological structure of rectifier and inverter,tank selection and power control mode of control technology in ultra-high frequency induction heating power designing are the explicitly analyzed in this paper.Then,the optimal scheme is selected and the relevant parameters are determined.Finally,an experimental prototype is built,the test shows that the driving circuit can work normally,the power supply prototype working frequency is more than 800 KHz,the single inverter capacity has reached more than 50 k W,which verifies the correctness and validity of the research work in this paper.