A Study On Static Characteristics Of SOI MOSFET

SOI MOSFET are characterized by high speed, low power dissipation, excellent anti-radiation and steady temperature performance, they have very wide application prospects. However, the theory of the devices has been very imperfect by far and restricted their development. In consideration of it, a study of the static characteristics of SOI MOSFET is made in detail.Firstly, an analysis of the structure of various SOI MOSFET and their characteristics under conditions of different front and back gate-voltage are made.An analytical current model is proposed, in which a general drain current formula near threshold-voltage for thin film double-gate SOI MOSFT is derived according to different parameters of front and back gate-oxide. The results obtained fit the experimental data well. From which, the analysis of the effect of the different parameters on drain-source current of thin film double-gate SOI MOSFET is made.Thirdly, an analytical model of the threshold voltage for thin film fully-depleted SOI MOSFET is established. From this model, an analysis of several main parameters on the threshold voltage for thin film fully-depleted SOI MOSFET is performed. The parameters includeABSTRACTthickness of silicon film, doping concentration of silicon film, the thickness of the front and back gate silicon dioxide and temperature etc. Based on this, the conclusion can be drawn that silicon film doping concentration and the thickness of front gate are the predominate factors which affect the threshold-voltage of SOI MOSFET.Finally, different kinds of breakdown characteristics of various SOI MOSFET are studied systematically. An Analysis of physic mechanism and computing formula of breakdown voltage of every breakdown type is carried on, and the correctness of computing formula with different parameters is verified by simulation.