Study On Preparation And Properties Of DNA-CTMA Complex

With the development of electronic technology,the traditional microelectronic devices have been developed widely.The traditional microelectronic technology can not be applied in large area due to the high hardness of silicon wafer and the high cost of this technology with the continuous improvement of people's demand.Getting rid of the disadvantages of the inorganic materials,organic material which has made significant progress in optoelectronic devices has been widely applied in radio frequency identification tags,removable storage devices,and chemical sensors.However,the environmental problems caused by organic materials are also increasing rapidly Therefore,it is necessary to develop and apply the biocompatible,biodegradable materials.The electronic properties of DNA biomaterials were extensively studied from the 1970 s to the early 2000 s.As a macromolecule biomaterial with unique double helix structure,DNA with low cost is easily accessible and decomposed.Therefore,it is very important to study the photoelectric properties of DNA biomaterials in optoelectronics field.This thesis is based on the DNA-CTMA complex.The DNA molecule was introduced and the research and applications of DNA photoelectric properties were summarized.The theory of fluorescence and of organic field effect transistor memory are introduced.Experimental materials and equipment were introduced,and prepared DNA complex material for the next experiment.The fluorescence intensity of fluorescent dyes based on the DNA-CTMA was studied.Eu(TTA)3(H2O)2 were prepared and the absorption spectra and fluorescence spectra of Eu(TTA)3(H2O)2 complex with different concentrations were investigated.The results showed that the absorption intensity is the maximum at 340 nm,,and the fluorescence intensity reached the maximum when the concentration was 60 m mol/L.The DNA-CTMA complex was mixed with 60 m mol/L Eu(TTA)3(H2O)2 complex in different proportions.DNA-CTMA has no effect on the solution of Eu(TTA)3(H2O)2 complex,but the fluorescence intensity of the films was larger,which provides basis for the preparation of organic photoluminescence devices.The spin coating parameters of DNA-CTMA were discussed.The UV spectrum shows absorption peaks appeared at 260 nm,infrared spectrum shows DNA-CTMA complex was prepared,AFM and XRD shows DNA-CTMA film has high crystallinity and well surface morphology,which provided the basic conditions for coating the semiconductor layer.Meanwhile the spin coating process parameters of the semiconductor material for organic electronic devices were determined and AFM and XRD,found well crystalline state of spin coating film which provides the basis for further preparation of electronic devices.The MIM device prepared with DNA-CTMA as the dielectric layer and the PMMA devices were compared and the dielectric properties of DNA-CTMA were investigated.The experiments show that DNA-CTMA has good insulation and can be used to prepare organic electronic devices.