The Preparation Of Porous Low K Material Film And Performance Characterization

With the expansion of IC, feature size decreases,the integrated circuit inside the metal line resistance and capacitance between metal lines are larger, this will lead to many of interconnect performance have fallen sharply, like the RC delay, cross noise, power consumption, and so on. A new generation of metal wire with copper instead of aluminum, makes the resistance of IC decreased by about40%, and today the important task of improving IC performance is how to reduce the capacitance. Among them, the thin film of low dielectric constant materials to replace of SiO2(k≈3.9) materials has become a hot spot, is also important to reduce the capacitance method. According to the International Technology Roadmap for Semiconductors (ITRS), in the node of45/32nm, the k value of the dielectric constant material film should be between2.0to2.6. The introduction of a certain percentage of the air gap within the film material, or mixed with low polarization elements to the film material film can reduce the value of k. Formed in the material plenty of methods, like using pore-forming agent, phase separation, etching processing method The spin coating method is a promising method of the prepared films and other thin film prepared by this method have a good flat and smaller cost.The precursor used in this paper is1,2-bis (triethoxysilyl) ethane(C2H5O)3SiCH2CH2Si(C2H5O)3, referred to as BTEE, the use of pore-forming agent to P123(EO-PO-the EO triblockcopolymer) the formation of voids inside the film, using hydrochloric acid as a catalyst, ethanol as solvent, and then adding deionized water to participate in the reaction, a spin-coating Preparation of porous ultra-low K film. Structural analysis equipment using FTIR, AFM and SEM characterization of the film surface morphology and composition structure. In this thesis, is the ratio, by changing the ratio and the change BTEE of BTEE and P123, and deionized water from the film k-value between2.0to2.4, the ideal solution composition. Re-test of the mechanical properties of these thin film, and finally won the last three components of the molar ratio of BTEE:to P123:H2O=5:0.12:200.Fourier transform infrared spectroscopy (FTIR) and thermal gravimetric analysis (TGA) to analyze the thermal stability of thin film materials. The results show that as the temperature changes from350℃to500℃, the chemical structure of the film material has not changed significantly, indicating good thermal stability. Test the mechanical properties of materials with nanoindentation and found that the film hardness with annealing temperature change has not changed significantly, the film Young’s modulus with annealing temperature to improve larger.